Evaluation of 4" InP(Fe) substrates for production of HBTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964373

D. A. Clark

引用次数: 2

Abstract

Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.

查看原文本刊更多论文

4" InP(Fe)衬底用于HBTs生产的评价

用于数字无线、蜂窝和光纤通信系统的异质结双极晶体管(HBTs)的大规模制造对高质量、大直径半绝缘的InP(Fe)衬底晶体产生了需求。本文的目的是回顾4”InP(Fe)衬底的发展和现状，与较小的衬底相比(Bliss, 1999)，并与GaAs(SI)的电阻率、EPD、厚度、平面度和方向规格进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

自引率

0.00%

发文量