用于ka波段应用的极高P1dB MMIC放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964359

R. Lai, R. Grundbacher, M. Barsky, A. Oki, M. Siddiqui, B. Pitman, R. Katz, P. Tran, L. Callejo, D. Streit

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引用次数: 7

摘要

本文描述了单级和双级MMIC功率放大器在ka波段的数据。1级和2级GaAs HEMT MMIC放大器的P1dB功率密度分别达到700 mW/mm和571 mW/mm。当偏置为最佳IP3时，分别达到4.5 W/mm和2.1 W/mm。后两级MMIC PA的性能是在一个非常紧凑的设计中实现的，4.08 mm/sup 2/总MMIC面积。这些被认为是在ka波段线性功率放大器中报道的最佳数字之一。

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Extremely high P1dB MMIC amplifiers for Ka-band applications

In this paper we describe single stage and two-stage MMIC power amplifier data at Ka-band. An extremely high P1dB power density of 700 mW/mm and 571 mW/mm were measured for the 1-stage and 2-stage GaAs HEMT MMIC amplifiers respectively. When biased for optimal IP3, 4.5 W/mm and 2.1 W/mm were achieved respectively. The performance of the latter 2-stage MMIC PA is achieved in a very compact design of 4.08 mm/sup 2/ total MMIC area. These are believed to be among the best numbers reported for linear power amplifiers at Ka-band.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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