Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964374

S. Lee, H. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahstrom, M. Rodwell

引用次数: 5

Abstract

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.

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转移衬底InP/InGaAs/InP双异质结双极晶体管，f/sub max/=425 GHz

采用转移衬底技术，研究了功率增益截止频率f/sub max/=425 GHz，电流增益截止频率f/sub t/=141 GHz的InP/InGaAs/InP双异质结双极晶体管(DHBT)。这是DHBT报告的最高f/sub max/。击穿电压BV/sub CEO/为8 V, J/sub C/=5/spl乘以/10/sup 4/ A/cm/sup 2/，直流电流增益/spl beta/为43。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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