A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance

Sang‐Woong Yoon, Chang-Ho Lee, Min-Gun Kim, Chung-Hwan Kim, Jaejin Lee, J. Laskar, Songcheol Hong
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引用次数: 5

Abstract

We present a fully integrated 6.7 GHz push-push oscillator MMIC using a cross-coupled differential topology with a capacitive coupling feedback in a commercial GaAs MESFET process. The push-push oscillator shows phase noise of -118.83 dBc/Hz at an offset frequency of 600 kHz with a 3.3 V supply voltage. This low phase-noise performance is comparable to, or better than, the best reported results of 5/spl sim/6 GHz-band oscillators implemented in CMOS and SiGe HBT processes. A 6.4 GHz fundamental oscillator MMIC using the cross-coupled differential topology was also fabricated. The measured phase-noise of the fundamental oscillator is -108 dBc/Hz at an offset frequency of 600 kHz. In addition to the low phase-noise, the push-push oscillator in this paper occupies a compact area of 480/spl times/500 /spl mu/m/sup 2/. To our knowledge, it is the first implementation of a GaAs MESFET-based push-push oscillator MMIC using the cross-coupled differential topology with capacitive coupling feedback. This work is also the first report that shows the low phase-noise performance of the push-push oscillator using the differential topology as compared with that of the fundamental oscillator.
一种紧凑的基于GaAs mesfet的推推式振荡器MMIC,采用差分拓扑,具有低相位噪声性能
我们提出了一个完全集成的6.7 GHz推推式振荡器MMIC,采用交叉耦合差分拓扑和电容耦合反馈,用于商用GaAs MESFET工艺。在3.3 V电源电压下,推-推振荡器在600 kHz偏置频率下显示相位噪声为-118.83 dBc/Hz。这种低相位噪声性能可与CMOS和SiGe HBT工艺中实现的5/spl sim/6 ghz频段振荡器的最佳结果相媲美或更好。采用交叉耦合差分拓扑结构制作了6.4 GHz基频MMIC。在偏置频率为600 kHz时,基振的相位噪声测量值为-108 dBc/Hz。除相位噪声低外,本文的推推式振荡器占用480/spl倍/500 /spl μ /m/sup 2/的紧凑面积。据我们所知,这是第一个使用电容耦合反馈的交叉耦合差分拓扑实现基于GaAs mesfet的推推式振荡器MMIC。这项工作也是第一个显示与基振相比,使用差分拓扑的推推振荡器的低相位噪声性能的报告。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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