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An Ultra Compact C-Band 5-Bit MMIC Phase Shifter Based on All-Pass Network 一种基于全通网络的超紧凑c波段5位MMIC移相器
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282806
K. Miyaguchi, M. Hieda, M. Hangai, T. Nishino, N. Yunoue, Y. Sasaki, M. Miyazaki
{"title":"An Ultra Compact C-Band 5-Bit MMIC Phase Shifter Based on All-Pass Network","authors":"K. Miyaguchi, M. Hieda, M. Hangai, T. Nishino, N. Yunoue, Y. Sasaki, M. Miyazaki","doi":"10.1109/EMICC.2006.282806","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282806","url":null,"abstract":"An ultra compact 5-bit MMIC phase shifter, operating in the C-band, is presented. The proposed phase shifting circuit utilizes the lumped-element all-pass network topology. The transition frequency of the all-pass network which determines the size of the circuit is set to be much higher than the operating bandwidth, which results in an extremely small chip size of the phase shifter in a relatively low frequency range. The MMIC phase shifter has been successfully fabricated with a die size of 1.72mm times 0.81mm (1.37mm2) and achieved a fractional bandwidth of 10%, demonstrating an insertion loss of 5.7 dB plusmn 0.8 dB and an RMS phase shift error of less than 2.3deg in the C-band. To our knowledge, the MMIC phase shifter is the smallest among the reported digital phase shifters which cover a total phase shift of 360deg for the C-band","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133811470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package 一种低成本SMD紧凑型封装的新型5-30GHz高线性压控可变衰减器
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282804
N. Poitrenaud, B. Lefebvre, S. Tranchant, M. Camiade
{"title":"A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package","authors":"N. Poitrenaud, B. Lefebvre, S. Tranchant, M. Camiade","doi":"10.1109/EMICC.2006.282804","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282804","url":null,"abstract":"The design and performance of a compact packaged 5-30GHz variable attenuator are reported in this paper. Using a standard 4-inch 0.7mum GaAs power MESFET technology with BCB coating and backside metallization, these shunt-type packaged attenuator exhibits more than 25dB dynamic range, with a nominal insertion loss from 3 to 6dB over the 5-30GHz frequency band. Using multi-gates FETs and biasing voltage sequential control, input power compression of more than 25 to 30dBm is achieved. To allow a significant cost reduction for RF module assembly, this voltage attenuator MMIC is housed in a standard 16L-QFN3times3 SMD molded package. To the author's knowledge, these results show the highest linearity reported up to now for a voltage variable attenuator in a SMD package","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133471453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Advances in GaN-based discrete power devices for L- and X-band applications L波段和x波段应用中基于氮化镓的分立功率器件的进展
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EUMC.2006.281472
J. Wurfl, R. Behtash, R. Lossy, A. Liero, W. Heinrich, G. Trankle, K. Hirche, G. Fischer
{"title":"Advances in GaN-based discrete power devices for L- and X-band applications","authors":"J. Wurfl, R. Behtash, R. Lossy, A. Liero, W. Heinrich, G. Trankle, K. Hirche, G. Fischer","doi":"10.1109/EUMC.2006.281472","DOIUrl":"https://doi.org/10.1109/EUMC.2006.281472","url":null,"abstract":"Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented. By exploiting typical GaN HFET related features such as improved linearity, power density, gain and broad band capability the devices allow for novel architectures for base stations in mobile communications and for space applications. Highlights to be presented are L-band power bar devices designed for continuous wave (cw) operation delivering an cw output power of 30 W and 100 W with 20 dB and 14 dB linear gain respectively. The architecture of these devices is based on novel gate \"feed plate\" structures. Furthermore discrete, hermetically packaged X-band devices for space based SSPAs in the power range of 10 W (continuous wave) at 8 GHz are presented","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123672669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
RF and Noise Performance of Multiple-Gate SOI MOSFETs 多栅极SOI mosfet的射频和噪声性能
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282815
A. Lázaro, B. Iñíguez
{"title":"RF and Noise Performance of Multiple-Gate SOI MOSFETs","authors":"A. Lázaro, B. Iñíguez","doi":"10.1109/EMICC.2006.282815","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282815","url":null,"abstract":"We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Antenna-coupled microbolometers for passive THz direct detection imaging arrays 无源太赫兹直接探测成像阵列天线耦合微辐射热计
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282743
P. Helisto, A. Luukanen, L. Gronberg, J. Penttila, H. Seppa, H. Sipola, C. Dietlein, E. Grossman
{"title":"Antenna-coupled microbolometers for passive THz direct detection imaging arrays","authors":"P. Helisto, A. Luukanen, L. Gronberg, J. Penttila, H. Seppa, H. Sipola, C. Dietlein, E. Grossman","doi":"10.1109/EMICC.2006.282743","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282743","url":null,"abstract":"In the recent years, millimetre wave and THz imaging have received a vast amount of interest due to the interesting possibilities and applications that imaging at these frequencies could enable. Many of the applications that have generated substantial interest (such as stand-off concealed weapons detection) often require exquisite sensitivity, while a low system cost is required. In this paper we discuss one potential candidate for affordable imaging arrays: an antenna-coupled superconducting microbolometer. We show that these devices possess capabilities that are hard to meet with other passive detection schemes. While refrigeration to cryogenic temperatures is required for maximum performance, we show that the devices can be operated within a cryogen-free refrigerator that allows for turn-key operation. Comparison with other detectors is presented","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132065976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Solutions for input impedance matching of nanodevices: Application to Y-Branch Junction HF to DC rectifier 纳米器件输入阻抗匹配的解决方案:在y支路结高频直流整流器上的应用
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282735
L. Bednarz, Rashmi, G. Farhi, B. Hackens, V. Bayot, I. Huynen
{"title":"Solutions for input impedance matching of nanodevices: Application to Y-Branch Junction HF to DC rectifier","authors":"L. Bednarz, Rashmi, G. Farhi, B. Hackens, V. Bayot, I. Huynen","doi":"10.1109/EMICC.2006.282735","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282735","url":null,"abstract":"The problem of high input impedance of nanoscaled devices is analyzed for the case of a Y-Branch Junction. An electrical nonlinear model of YBJs validated on measured data is used to show influence of source impedance on HF to DC detection performance in YBJ. An impedance matching network is proposed and is proven to increase the detection sensitivity. Multiple 2DEG channels material used to fabricate parallel YBJ's stacked on one another is also proposed as an alternative solution to mismatch problem. It is shown that using multiple 2DEG the input impedance and reflection coefficient can be decreased but at the price of decrease in sensitivity","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130757335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Integrated Left-Handed Metamaterials on MMIC Technology 基于MMIC技术的集成左手超材料
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282679
H. Chua, P. Curtis, W. Tong, Z.R. Hu, A. Gibson, M. Missous
{"title":"Integrated Left-Handed Metamaterials on MMIC Technology","authors":"H. Chua, P. Curtis, W. Tong, Z.R. Hu, A. Gibson, M. Missous","doi":"10.1109/EMICC.2006.282679","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282679","url":null,"abstract":"Super compact multilayer broadband left-handed (LH) metamaterials medium for RF/MMIC applications have been previously proposed and demonstrated by full wave and equivalent circuit analysis (Tong and Hu, 2005 and Horii et al., 2005). From references (Tong and Hu, 2005 and Horii et al., 2005), LH metamaterials have the potential to miniaturise circuits for low frequency applications. In this paper, we propose an integrated unit cell and transmission line, which has the advantages of simpler fabrication, convenient probe contactability and the potential integrates with MMIC technology. LH unit cell circuits have been developed, and the simulation and measurement results are presented. The miniaturised LH transmission line is also developed and the simulation and measurement results are presented","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127206228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Indium Antimonide based Quantum Well FETs for Ultra-high Frequency, Low Power Dissipation Circuits 超高频低功耗电路中基于锑化铟的量子阱场效应管
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282741
T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding
{"title":"Indium Antimonide based Quantum Well FETs for Ultra-high Frequency, Low Power Dissipation Circuits","authors":"T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding","doi":"10.1109/EMICC.2006.282741","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282741","url":null,"abstract":"Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so has potential for ultra-high frequency operation with very low power dissipation. Unoptimised, uncooled quantum well heterojunction FETs, with gate length of 85nm, that have a cutoff frequency of 340GHz at only 0.5 V Vds. The prospects of this technology for future microwave applications in excess of 100GHz are shown to be very promising","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126739580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 4.5-5.8 GHz Differential LC VCO using 0.35 μm SiGe BiCMOS Technology 采用0.35 μm SiGe BiCMOS技术的4.5-5.8 GHz差分LC压控振荡器
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282671
O. Esame, I. Tekin, Y. Gurbuz
{"title":"A 4.5-5.8 GHz Differential LC VCO using 0.35 μm SiGe BiCMOS Technology","authors":"O. Esame, I. Tekin, Y. Gurbuz","doi":"10.1109/EMICC.2006.282671","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282671","url":null,"abstract":"In this paper, design and realization of a 4.5-5.8 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with AMS 0.35μm-SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). A linear, 1300 MHz tuning range is measured with on-chip, accumulation-mode varactors. Fundamental frequency output power changes between -1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits. Post-layout simulations of the VCO led to -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency of phase noise. The circuit occupies an area of 0.6 mm2, including RF and DC pads","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128199199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
CMOS Large Signal and RF Noise Model for CAD 用于CAD的CMOS大信号和射频噪声模型
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282791
I. Angelov, M. Feradahl, F. Ingvarson, H. Zirath, H. Vickes
{"title":"CMOS Large Signal and RF Noise Model for CAD","authors":"I. Angelov, M. Feradahl, F. Ingvarson, H. Zirath, H. Vickes","doi":"10.1109/EMICC.2006.282791","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282791","url":null,"abstract":"A compact large-signal model (LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, power spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits. The LS model was extended to model the RF noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114083783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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