RF and Noise Performance of Multiple-Gate SOI MOSFETs

Abstract

We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared