多栅极SOI mosfet的射频和噪声性能

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282815

A. Lázaro, B. Iñíguez

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引用次数: 5

摘要

我们提出了一种用于直流、射频和噪声建模的单栅(SG) SOI、圆柱形未掺杂(轻掺杂)栅极-全栅极(GAA)或环栅(SGT) mosfet和双栅完全耗尽绝缘体上硅(DG SOI)的新模型。利用该模型，对单门、GAA和DG的模拟性能和噪声性能进行了比较

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RF and Noise Performance of Multiple-Gate SOI MOSFETs

We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared

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2006 European Microwave Integrated Circuits Conference

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