超高频低功耗电路中基于锑化铟的量子阱场效应管

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282741

T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding

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摘要

锑化铟具有半导体中最高的电子迁移率和饱和速度，因此具有超低功耗的超高频工作潜力。非优化、非冷却量子阱异质结场效应管，栅极长度为85nm，在0.5 V Vds下截止频率为340GHz。该技术在未来超过100GHz的微波应用中显示出非常有前景

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Indium Antimonide based Quantum Well FETs for Ultra-high Frequency, Low Power Dissipation Circuits

Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so has potential for ultra-high frequency operation with very low power dissipation. Unoptimised, uncooled quantum well heterojunction FETs, with gate length of 85nm, that have a cutoff frequency of 340GHz at only 0.5 V Vds. The prospects of this technology for future microwave applications in excess of 100GHz are shown to be very promising

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2006 European Microwave Integrated Circuits Conference

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