N. Poitrenaud, B. Lefebvre, S. Tranchant, M. Camiade
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引用次数: 9
摘要
本文介绍了一种紧凑封装的5-30GHz可变衰减器的设计和性能。采用标准的4英寸0.7 μ m GaAs功率MESFET技术，采用BCB涂层和背面金属化，这些并联型封装衰减器具有超过25dB的动态范围，在5-30GHz频段内标称插入损耗为3至6dB。采用多栅极场效应管和偏置电压顺序控制，可实现超过25 ~ 30dBm的输入功率压缩。为了显著降低射频模块组装成本，该电压衰减器MMIC被封装在标准的16L-QFN3times3 SMD模制封装中。据作者所知，这些结果显示了迄今为止SMD封装中电压可变衰减器的最高线性度
A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package
The design and performance of a compact packaged 5-30GHz variable attenuator are reported in this paper. Using a standard 4-inch 0.7mum GaAs power MESFET technology with BCB coating and backside metallization, these shunt-type packaged attenuator exhibits more than 25dB dynamic range, with a nominal insertion loss from 3 to 6dB over the 5-30GHz frequency band. Using multi-gates FETs and biasing voltage sequential control, input power compression of more than 25 to 30dBm is achieved. To allow a significant cost reduction for RF module assembly, this voltage attenuator MMIC is housed in a standard 16L-QFN3times3 SMD molded package. To the author's knowledge, these results show the highest linearity reported up to now for a voltage variable attenuator in a SMD package
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