CMOS Large Signal and RF Noise Model for CAD

I. Angelov, M. Feradahl, F. Ingvarson, H. Zirath, H. Vickes
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引用次数: 9

Abstract

A compact large-signal model (LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, power spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits. The LS model was extended to model the RF noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model
用于CAD的CMOS大信号和射频噪声模型
提出了一种适用于高频CMOS晶体管的紧凑大信号模型(LS),并通过直流、s参数、功率谱和负载池测量对其进行了实验评估。在90纳米CMOS场效应管上的测量结果与模拟结果非常吻合。由于模型参数数量少,模型方程选择细致,该模型具有良好的收敛性,这对射频电路的非线性仿真具有重要意义。将LS模型扩展到射频噪声模型中,并在商用CAD工具中实现,结果表明该模型与测量值具有良好的对应关系
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