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2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices最新文献

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Investigation of magnetotransistor double-well regions structure and process parameters influence on magnetic sensitivity value 磁敏晶体管双阱区结构及工艺参数对磁敏值影响的研究
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173954
R. D. Tikhonov, A. V. Kozlov, A. Krasukov, S. Polomoshnov, A.G. Balashov
{"title":"Investigation of magnetotransistor double-well regions structure and process parameters influence on magnetic sensitivity value","authors":"R. D. Tikhonov, A. V. Kozlov, A. Krasukov, S. Polomoshnov, A.G. Balashov","doi":"10.1109/EDM.2009.5173954","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173954","url":null,"abstract":"The influence of the location of p-well-n-well and n-well-p-substrate junctions and the well formation diffusion parameters on the double-well magnetotransistor magnetic sensitivity value was investigated by means of numerical modeling.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"C-34 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114116521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Researching of using transistor in cap mode as element of a capacitor-transistor logic 用电容模式晶体管作为电容-晶体管逻辑元件的研究
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173953
A. V. Nikolaev
{"title":"Researching of using transistor in cap mode as element of a capacitor-transistor logic","authors":"A. V. Nikolaev","doi":"10.1109/EDM.2009.5173953","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173953","url":null,"abstract":"This paper consider possibility of building complex logic capacitor-transistor devices with using transistor in cap mode (with shorted source and drain) as cap element. Parameters deviations from theoretical values caused by real device influence are obtained with technology device modeling in ISE TCAD.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126182755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of probability-time characteristics of wireless MAC protocols WiMAX-like with fixed super frame formats 具有固定超级帧格式的类wimax无线MAC协议的概率-时间特性分析
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173959
V. Drozdova
{"title":"Analysis of probability-time characteristics of wireless MAC protocols WiMAX-like with fixed super frame formats","authors":"V. Drozdova","doi":"10.1109/EDM.2009.5173959","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173959","url":null,"abstract":"In this paper, we generally present the method of the balance of load intensity, used for the analysis of probabilistic and temporal characteristics of the wireless Medium Access Control protocols with fixed frame formats. We also demonstrate the characteristics of wireless protocols of controlled access with fixed frame formats, which was got by using of this method - delivery time.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115632693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Monte carlo simulation of thin silicon dioxide layer evaporation 薄二氧化硅层蒸发的蒙特卡罗模拟
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173931
S. V. Usenkov, I. V. Mzhelskiy, N. Shwartz
{"title":"Monte carlo simulation of thin silicon dioxide layer evaporation","authors":"S. V. Usenkov, I. V. Mzhelskiy, N. Shwartz","doi":"10.1109/EDM.2009.5173931","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173931","url":null,"abstract":"Monte Carlo model of evaporation of thin oxide layer on silicon substrate was suggested. Algorithm of chemical reactions was modified to valid treatment of Si-SiO2 system. This improvement allows simulation of high-temperature evaporation of thin dioxide layers, and explains available experimental data.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124324409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface-enhanced Raman scattering by CdS quantum dots CdS量子点表面增强拉曼散射
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173943
A. Milekhin, L. Sveshnikova, T. Duda, N. Surovtsev, S. Adichtchev, D. Zahn
{"title":"Surface-enhanced Raman scattering by CdS quantum dots","authors":"A. Milekhin, L. Sveshnikova, T. Duda, N. Surovtsev, S. Adichtchev, D. Zahn","doi":"10.1109/EDM.2009.5173943","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173943","url":null,"abstract":"Surface enhanced Raman scattering is studied in nanostructures with CdS quantum dots formed by using the Langmuir-Blodgett technology. Features related to longitudinal optical phonons of quantum dots are observed in the Raman spectra of both free-standing CdS quantum dots and the dots embedded in an organic matrix. Strong enhancement of intensity (about factor of 700) of Raman scattering by free quantum dots is observed by deposition of silver clusters onto the nanostructure surfaces. The dependence of the Raman intensity on the excitation energy is resonant with a maximum at the energy corresponding to the maximal absorption of Ag clusters.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126523403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Foundation of the ozone/NO-ultrasound method in treatment and rehabilitation of patients with milk gland cancer and lymphedema of upper extremity after combined treatment 臭氧/ no -超声法在乳腺癌合并上肢淋巴水肿患者联合治疗及康复中的应用基础
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5174017
V. Mironenko, V. V. Pedder, V. K. Kosenok, M. V. Naboka, S. V. Dmitrienko, I. V. Surgutskova
{"title":"Foundation of the ozone/NO-ultrasound method in treatment and rehabilitation of patients with milk gland cancer and lymphedema of upper extremity after combined treatment","authors":"V. Mironenko, V. V. Pedder, V. K. Kosenok, M. V. Naboka, S. V. Dmitrienko, I. V. Surgutskova","doi":"10.1109/EDM.2009.5174017","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174017","url":null,"abstract":"The new high effective ozone/NO ultrasonic method in complicated postoperative wound treatment of post-radiation fibroses and lymphedema of upper extremity after combined treatment of milk gland cancer is designed and introduced in clinic practice. Method uses ultrasonic and ozone/NO-generating devices which is resolved for clinical application and provides the possibility for treatment the patients with milk gland cancer by the way of complex application of thermal contact temperatures, low frequency ultrasound and high active ozone/NO-contained medicals in various phase states of treatment and rehabilitation of patients. This method have been successfully clinically tested and can be recommended for introduction into the system of treatment and rehabilitation actions within the limits of treatment programs for patients with milk gland cancer.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133970674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Perspectives of capacitive discharge application for pumping of metal vapor lasers with modified kinetics 电容放电在改进动力学的金属蒸气激光器抽运中的应用前景
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5174000
F. Gubarev, G. Evtushenko, D. Shiyanov, V. B. Sukhanov
{"title":"Perspectives of capacitive discharge application for pumping of metal vapor lasers with modified kinetics","authors":"F. Gubarev, G. Evtushenko, D. Shiyanov, V. B. Sukhanov","doi":"10.1109/EDM.2009.5174000","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174000","url":null,"abstract":"The paper presents the study of CuBr lasers excited by longitudinal capacitive discharge. Performance characteristics of the laser with outer electrodes using various excitation circuits are considered. The effect of HBr additive on the discharge and lasing characteristics of capacitively excited CuBr laser is contrasted to that of conventional pulse-periodic discharge with inner electrodes. It is shown that when using such a type of pumping the influence of electronegative HBr additive depends on the type of the excitation circuit that is used. The best results are achieved when using the circuits providing a high rate of rise of the discharge current. The maximum increasing of output power and laser efficiency (up to 3 times) with HBr additive was obtained in a gas discharge tube of a relatively large bore (2.7 cm), which suggests good output power scaling of CuBr-HBr laser with capacitive discharge pumping.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129321718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ignition sources of methane-air mix and their influence at multichannel ignition center detection device construction at the early stage 甲烷-空气混合气的点火源及其对早期多通道点火中心检测装置建设的影响
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5174009
N. Tupikina, D. V. Gerasimov, A. Pavlov, I. A. Uskova, E. V. Sypin
{"title":"Ignition sources of methane-air mix and their influence at multichannel ignition center detection device construction at the early stage","authors":"N. Tupikina, D. V. Gerasimov, A. Pavlov, I. A. Uskova, E. V. Sypin","doi":"10.1109/EDM.2009.5174009","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174009","url":null,"abstract":"The article attempts overview of ignition sources of methane-air mix and possibility of their registration. Using the multichannel ignition centre detection device at an early stage with additional channels, intended for methane-air mix ignition sources registration will allow to improve response speed, sensitivity, and reliability of decision-making by the device.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132103919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research and device simulation of substrate noise distribution in digital integrated elements 数字集成元件衬底噪声分布的研究与器件仿真
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173918
T. Krupkina, D. Rodionov
{"title":"Research and device simulation of substrate noise distribution in digital integrated elements","authors":"T. Krupkina, D. Rodionov","doi":"10.1109/EDM.2009.5173918","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173918","url":null,"abstract":"In this paper aspects of device simulation of digital elements have been reviewed. Theoretical and practical aspects of noise modeling in integrated circuits substrate have been discussed.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134279522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of influence of acoustical contact on parameters of ultrasonic oscillatory system 声接触对超声振荡系统参数影响的研究
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173978
V. Khmelev, D. Abramenko, V. V. Pedder, S. N. Tsyganok, R. Barsukov, M. Khmelev
{"title":"Investigation of influence of acoustical contact on parameters of ultrasonic oscillatory system","authors":"V. Khmelev, D. Abramenko, V. V. Pedder, S. N. Tsyganok, R. Barsukov, M. Khmelev","doi":"10.1109/EDM.2009.5173978","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173978","url":null,"abstract":"Results of researches of influence of acoustical contacts between exchangeable operating tool and electro-acoustical transducer on mechanical and electrical characteristics of oscillatory system are presented in this article. Measured amplitude-frequency and phase-frequency dependence of oscillatory system with various types of operating tools are shown. Analyze of measured dependences is made. Searching of criteria of quality of acoustical contact is made. Usage of founded criteria allows preventing a damaging of ultrasonic technological device or its operation in the ineffective mode.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133228732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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