薄二氧化硅层蒸发的蒙特卡罗模拟

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI:10.1109/EDM.2009.5173931

S. V. Usenkov, I. V. Mzhelskiy, N. Shwartz

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引用次数: 1

摘要

提出了硅衬底上薄氧化层蒸发的蒙特卡罗模型。对化学反应算法进行了改进，使其能够有效地处理Si-SiO2体系。这一改进允许模拟薄二氧化层的高温蒸发，并解释了现有的实验数据。

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Monte carlo simulation of thin silicon dioxide layer evaporation

Monte Carlo model of evaporation of thin oxide layer on silicon substrate was suggested. Algorithm of chemical reactions was modified to valid treatment of Si-SiO2 system. This improvement allows simulation of high-temperature evaporation of thin dioxide layers, and explains available experimental data.

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来源期刊

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

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