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First page 第一页
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2022-12-22 DOI: 10.5750/ejpch.v4i2.1083.s126
A. V. Dvurechenskiy, A. Yakovlev
{"title":"First page","authors":"A. V. Dvurechenskiy, A. Yakovlev","doi":"10.5750/ejpch.v4i2.1083.s126","DOIUrl":"https://doi.org/10.5750/ejpch.v4i2.1083.s126","url":null,"abstract":"","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125270834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Last page 最后一页
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2011-10-05 DOI: 10.1353/dss.2007.0093
Nicolaus Mills
{"title":"Last page","authors":"Nicolaus Mills","doi":"10.1353/dss.2007.0093","DOIUrl":"https://doi.org/10.1353/dss.2007.0093","url":null,"abstract":"Just six months after the American invasion of Iraq began, President George W. Bush went before the United Nations General Assembly to announce that he was prepared to make \"the greatest financial commitment of its kind since the Marshall Plan\" in order to rebuild Iraq. The president's decision to link his policy in Iraq with George Marshall's policy in post–World War II Europe reminds us of how influential the Marshall Plan remains sixty years after it was conceived. But the president's effort at linkage also reminds us of how enormously talented the men around Marshall were in the 1947–48 period in which he served as secretary of state.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127760267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Techniques of imitation modeling by the numerical methods of measuring processes of the multifunctional force sensor 多功能力传感器测量过程数值模拟建模技术
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173947
V. A. Abanin, Mihail Ju. Loktev
{"title":"Techniques of imitation modeling by the numerical methods of measuring processes of the multifunctional force sensor","authors":"V. A. Abanin, Mihail Ju. Loktev","doi":"10.1109/EDM.2009.5173947","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173947","url":null,"abstract":"The main provisions of the techniques of imitation modeling by the numerical methods of measuring processes of the multifunctional force sensor are analyzed. Its physical model is described. One of the options for elastic element design is provided.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115296499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quick-operating object temperature control gauge with multiple alarm thresholds 快速操作的物体温度控制计，具有多个报警阈值
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173999
D. V. Gerasimov, A. Sidorenko, A. Pavlov, E. Sypin
{"title":"Quick-operating object temperature control gauge with multiple alarm thresholds","authors":"D. V. Gerasimov, A. Sidorenko, A. Pavlov, E. Sypin","doi":"10.1109/EDM.2009.5173999","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173999","url":null,"abstract":"In article the way of ignition pyrometric gauge development is considered. This gauge is allow to detect ignitions in early stages of evolution and dangerous heating of object in controlled area that allow to create effective explosion suppressing systems for industry with potential explosion dangerous.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115767852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo simulation of MBE and oxidation of porous silicon surface for production nanochannel membranes 制备纳米通道膜的多孔硅表面MBE和氧化的蒙特卡罗模拟
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173930
Ya. V. Titovskaya, N. Shwartz, S. I. Romanov, Z. Yanovitskaja
{"title":"Monte Carlo simulation of MBE and oxidation of porous silicon surface for production nanochannel membranes","authors":"Ya. V. Titovskaya, N. Shwartz, S. I. Romanov, Z. Yanovitskaja","doi":"10.1109/EDM.2009.5173930","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173930","url":null,"abstract":"Possibility to decrease nanochannel diameters up to one nanometer was demonstrated by Monte Carlo simulation of molecular beam epitaxy on nanochannel surface with following thermal oxidation. Study of atomic processes on porous Si(111) substrates was carried out. In wide range of deposition parameters the rate of nanochannel inlet size decrease was estimated to be 0.13 – 0.15 nm/ML. Optimal conditions for silicon deposition on membrane surface were determined: substrate temperature - from 520 to 700 K, and silicon flux intensity of 10−2 − 10 ML/s. Simulation of nanochannel membranes oxidation in oxygen flux revealed that effect of channel inlet size decreasing due oxidation was insignificant.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125181945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scanning infrared microscope 扫描红外显微镜
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5174001
D. Karnaushenko, V. G. Polovinkin
{"title":"Scanning infrared microscope","authors":"D. Karnaushenko, V. G. Polovinkin","doi":"10.1109/EDM.2009.5174001","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174001","url":null,"abstract":"In this paper described scanning infrared microscope (SIRM) based on F408 infrared (IR) line spectrometer designed and developed in the ISP SB RAS. An automatically scanning system has been designed and implemented. Optical magnification and spatial resolution for given optical system has been determined. Advantages and disadvantages of SIRM in compare with F401 InAs matrix infrared microscope are also shown.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122461804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolutional synthesis of broadband matching and matching-correcting networks 宽带匹配与匹配校正网络的进化综合
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173948
A. S. Volokhin, G. Devyatkov
{"title":"Evolutional synthesis of broadband matching and matching-correcting networks","authors":"A. S. Volokhin, G. Devyatkov","doi":"10.1109/EDM.2009.5173948","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173948","url":null,"abstract":"This paper deals with structural and parametric synthesis of broadband matching and matching-correcting networks. The synthesis of the network structure is performed using the evolutional algorithm developed. For optimization of the element values the real-coded genetic algorithm is used. In the paper the brief description of the method developed is given and some special test cases are considered.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114291176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effectiveness increase of ultrasonic cavitational processing of viscous liquid media 提高粘性液体介质超声空化处理效率
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173985
V. Khmelev, S. Khmelev, D. Abramenko, S. N. Tsyganok
{"title":"Effectiveness increase of ultrasonic cavitational processing of viscous liquid media","authors":"V. Khmelev, S. Khmelev, D. Abramenko, S. N. Tsyganok","doi":"10.1109/EDM.2009.5173985","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173985","url":null,"abstract":"The article is devoted to the problems which can occur during the ultrasonic processing of liquid media with high damping of ultrasonic vibrations. The disadvantages of existing equipment are shown. The new ways of ultrasonic cavitational processing of viscous media are offered; they let to realize new technological processes, which are impossible in ordinary conditions without ultrasonic influence.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128596314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Examination of nanotube growth conditions by Monte Carlo simulation 纳米管生长条件的蒙特卡罗模拟研究
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5173934
E. Sheremet, A. Nastovjak, I. Neizvestny, N. Shwartz
{"title":"Examination of nanotube growth conditions by Monte Carlo simulation","authors":"E. Sheremet, A. Nastovjak, I. Neizvestny, N. Shwartz","doi":"10.1109/EDM.2009.5173934","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173934","url":null,"abstract":"The dependence of nanowhisker morphology on growth conditions was studied by Monte Carlo simulation. Areas of growth conditions of filled and hollow nanowhiskers (nanotubes) were found. The area of inside dimension of nanotubes was shown to rise with increasing of flux.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129280759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A power losses calculation in a four-legged three-level voltage source inverter 四足三电平电压源逆变器的功率损耗计算
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI: 10.1109/EDM.2009.5174013
M. Dybko, S. S. Turnaev, S. Brovanov
{"title":"A power losses calculation in a four-legged three-level voltage source inverter","authors":"M. Dybko, S. S. Turnaev, S. Brovanov","doi":"10.1109/EDM.2009.5174013","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174013","url":null,"abstract":"This paper presents analytical equations for power losses calculation in three-level VSI controlled by carrier-based PWM with third harmonic injection. A magnitude current value in the four leg devices depending on three-phase load unbalance was obtained.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130651793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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