{"title":"Researching of using transistor in cap mode as element of a capacitor-transistor logic","authors":"A. V. Nikolaev","doi":"10.1109/EDM.2009.5173953","DOIUrl":null,"url":null,"abstract":"This paper consider possibility of building complex logic capacitor-transistor devices with using transistor in cap mode (with shorted source and drain) as cap element. Parameters deviations from theoretical values caused by real device influence are obtained with technology device modeling in ISE TCAD.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper consider possibility of building complex logic capacitor-transistor devices with using transistor in cap mode (with shorted source and drain) as cap element. Parameters deviations from theoretical values caused by real device influence are obtained with technology device modeling in ISE TCAD.