磁敏晶体管双阱区结构及工艺参数对磁敏值影响的研究

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI:10.1109/EDM.2009.5173954

R. D. Tikhonov, A. V. Kozlov, A. Krasukov, S. Polomoshnov, A.G. Balashov

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引用次数: 0

摘要

采用数值模拟的方法，研究了p-井-n-井和n-井-p-衬底结的位置以及地层扩散参数对双阱磁敏晶体管磁敏值的影响。

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Investigation of magnetotransistor double-well regions structure and process parameters influence on magnetic sensitivity value

The influence of the location of p-well-n-well and n-well-p-substrate junctions and the well formation diffusion parameters on the double-well magnetotransistor magnetic sensitivity value was investigated by means of numerical modeling.

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2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

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