2005 13th International Conference on Advanced Thermal Processing of Semiconductors最新文献_第4页

Optimization in vacuum photothermal processing (VPP) 真空光热工艺的优化

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI: 10.1109/RTP.2005.1613713

A. Axelevitch, G. Golan, B. Gorenstein

引用次数: 1

Multiple reflection effects during the in-situ calibration of an emissivity independent radiation thermometer 非发射率辐射温度计原位标定过程中的多重反射效应

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI: 10.1109/RTP.2005.1613710

B.J. Brosilov, Y. Naor, Y. Baharav

{"title":"Multiple reflection effects during the in-situ calibration of an emissivity independent radiation thermometer","authors":"B.J. Brosilov, Y. Naor, Y. Baharav","doi":"10.1109/RTP.2005.1613710","DOIUrl":"https://doi.org/10.1109/RTP.2005.1613710","url":null,"abstract":"We present an improved in-situ calibration procedure for the reflectometer channel of an integrated radiometer/reflectometer used for emissivity independent wafer temperature measurement in semiconductor production lines in RTP and other single-wafer processes (HDP-CVD, PVD, etc.). The improved calibration procedure, which has been implemented in our NTM line of radiation thermometers, allows for more accurate wafer temperature measurement, particularly for very low emissivity wafers. The calibration procedure is improved by explicitly accounting for the localized drop in reflectivity of a calibration standard used for the reflectometer calibration, when this standard is brought in close proximity to the radiometer/reflectometer probe tip. The reflectivity of the standard decreases near the probe tip due to a small \"cavity effect\" interaction between the probe tip and the reflectivity standard. Failure to account for the decreased reflectivity of the calibration standard results in a small reflectometer calibration error, which causes the combined radiometer/reflectometer to exhibit a small residual emissivity dependence in the temperature measurement. The improved calibration procedure eliminates this small emissivity dependence, thus allowing improved temperature measurement accuracy, particularly for high reflectivity (low emissivity) wafers","PeriodicalId":253409,"journal":{"name":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129420524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation 等离子体掺杂和随后的超浅结形成的快速热处理

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI: 10.1109/RTP.2005.1613683

B. Mizuno, Y. Sasaki, C. Jin, H. Tamura, K. Okashita, H. Sauddin, H. Ito, K. Tsutsui, H. Iwai

引用次数: 0

Enabling single-wafer low temperature radical oxidation 实现单晶片低温自由基氧化

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI: 10.1109/RTP.2005.1613696

Y. Yokota, S. Ramamurthy, K. Koike, K. Izumi

{"title":"Enabling single-wafer low temperature radical oxidation","authors":"Y. Yokota, S. Ramamurthy, K. Koike, K. Izumi","doi":"10.1109/RTP.2005.1613696","DOIUrl":"https://doi.org/10.1109/RTP.2005.1613696","url":null,"abstract":"This paper reports the study of low temperature radical oxidation by using highly concentrated ozone gas in a single-wafer rapid thermal processor. As device structures continue to shrink in geometry, integration of new materials and the complexity of process flows demand growth of high quality oxides with reduced thermal budget. This requirement poses a major challenge for thermal oxidation since lowering the process temperature causes degradation of oxide film quality, in general. Based on the fact that RadOxtrade have already demonstrated unique advantages in a variety of applications for current devices, it is expected that enabling radical oxidation at lower temperature would be beneficial for advanced devices. Highly concentrated ozone gas was employed as the source of radicals. The ozonator used for this study is capable to produce a gas mixture up to 90 vol% ozone (in oxygen) safely by adsorption/desorption technique. Several design of experiments (DOE) were carried out for thickness and thickness non-uniformity study, and film properties were compared with baseline processes using non-contact electrical measurements","PeriodicalId":253409,"journal":{"name":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132910713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultra low temperature NISI processing 超低温NISI加工

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI: 10.1109/RTP.2005.1613705

A. Hunter, C. Tanasa, R. Ramanujam, A. Tang, N. Tam, B. Ramachandran, R. Achutharaman, S. Ramamurthy, J. Ranish

引用次数: 0

Advanced process control in RTP using the "relative power" 基于“相对功率”的RTP高级过程控制

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI: 10.1109/RTP.2005.1613708

T. Gutt

引用次数: 0

Novel fabrication process to realize ultra-thin (EOT = 0.7 nm) and ultra-low-leakage SiON gate dielectrics 实现超薄(EOT = 0.7 nm)和超低漏锡栅电介质的新工艺

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2004-06-15 DOI: 10.1109/VLSIT.2004.1345462

D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, S. Inumiya, K. Eguchi, M. Takayanagi

引用次数: 20