{"title":"基于“相对功率”的RTP高级过程控制","authors":"T. Gutt","doi":"10.1109/RTP.2005.1613708","DOIUrl":null,"url":null,"abstract":"Integrated circuits in safety critical applications like airbag or ABS have high quality requirements. During production of these chips the control of the quality must be applied down to each single process step. If the single wafer process is a RTP step the electrical power used to heat up the wafer can be tracked to monitor the system behaviour. In combination with other parameters like chamber temperature or temperature profile measurements misprocessed wafers can be detected and the fault mechanism can be concluded","PeriodicalId":253409,"journal":{"name":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","volume":"159 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced process control in RTP using the \\\"relative power\\\"\",\"authors\":\"T. Gutt\",\"doi\":\"10.1109/RTP.2005.1613708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Integrated circuits in safety critical applications like airbag or ABS have high quality requirements. During production of these chips the control of the quality must be applied down to each single process step. If the single wafer process is a RTP step the electrical power used to heat up the wafer can be tracked to monitor the system behaviour. In combination with other parameters like chamber temperature or temperature profile measurements misprocessed wafers can be detected and the fault mechanism can be concluded\",\"PeriodicalId\":253409,\"journal\":{\"name\":\"2005 13th International Conference on Advanced Thermal Processing of Semiconductors\",\"volume\":\"159 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 13th International Conference on Advanced Thermal Processing of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTP.2005.1613708\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2005.1613708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced process control in RTP using the "relative power"
Integrated circuits in safety critical applications like airbag or ABS have high quality requirements. During production of these chips the control of the quality must be applied down to each single process step. If the single wafer process is a RTP step the electrical power used to heat up the wafer can be tracked to monitor the system behaviour. In combination with other parameters like chamber temperature or temperature profile measurements misprocessed wafers can be detected and the fault mechanism can be concluded