等离子体掺杂和随后的超浅结形成的快速热处理

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI:10.1109/RTP.2005.1613683

B. Mizuno, Y. Sasaki, C. Jin, H. Tamura, K. Okashita, H. Sauddin, H. Ito, K. Tsutsui, H. Iwai

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引用次数: 0

摘要

作者利用等离子体非晶(PA)技术和光谱椭偏仪(SE)技术对等离子体掺杂(PD)的研究现状进行了总结和更新。作者还推荐PD作为45纳米及以上技术节点超浅结形成的最佳替代方法。将激光退火(LA)和闪光灯退火(FLA)这两种最新的退火方法与PD相结合。传统的尖峰RTA也被用来获得足够的结深和较低的电阻

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Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation

Authors summarize and update the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). Authors also recommend PD as the best alternative method for ultra shallow junction formation at the 45 nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used to achieve adequate junction depth with lower resistance

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2005 13th International Conference on Advanced Thermal Processing of Semiconductors

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