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International Conferencre on Simulation of Semiconductor Processes and Devices最新文献

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Investigation of magnetic field effects on energy gap for nanoscale InAs/GaAs semiconductor ring structures 磁场对纳米级InAs/GaAs半导体环结构能隙影响的研究
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034540
Yiming Li, Hsiao-Mei Lu, O. Voskoboynikov, C. Lee, S. M. Sze
{"title":"Investigation of magnetic field effects on energy gap for nanoscale InAs/GaAs semiconductor ring structures","authors":"Yiming Li, Hsiao-Mei Lu, O. Voskoboynikov, C. Lee, S. M. Sze","doi":"10.1109/SISPAD.2002.1034540","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034540","url":null,"abstract":"We investigate the electron and hole energy states for ellipsoidal and rectangular torus-shaped InAs/GaAs semiconductor quantum rings in an external magnetic field. Our realistic three-dimensional (3D) model construction is based on: (i) the effective mass Hamiltonian in non-parabolic approximation for electrons, (ii) the effective mass Hamiltonian in parabolic approximation for holes, (iii) the position- and energy-dependent quasi-particle effective mass approximation for electrons, (iv) the finite hard wall confinement potential, and (v) the Ben Daniel-Duke boundary conditions. To solve this 3D nonlinear problem, we apply the nonlinear iterative method to obtain self-consistent solutions. Due to the penetration of the applied magnetic field into the torus region, we have found a non-periodical oscillation of the energy band gap versus magnetic fields between the lowest electron and hole states. The oscillation is shape- and size-dependent. The result is useful to describe magneto-optical properties of the nano-scale quantum rings.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120996962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated TCAD and ECAD solutions - a paradigm shift 集成TCAD和ECAD解决方案-模式转变
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034504
Shiuh-Wuu Lee
{"title":"Integrated TCAD and ECAD solutions - a paradigm shift","authors":"Shiuh-Wuu Lee","doi":"10.1109/SISPAD.2002.1034504","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034504","url":null,"abstract":"This paper highlights the emerging need for selective integration of physical-model based TCAD modeling and simulation tools that have been mostly applied to technology development with ECAD tools that have been traditionally used for product design. The emerging technology trends that lead to this paradigm shift are highlighted. The architecture and requirements of integrated TCAD-ECAD solutions are also discussed along with the infrastructure required to successfully meet this challenge.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131103927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum transport modeling in nano-scale devices 纳米级器件中的量子输运模型
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034568
M. Ogawa, H. Tsuchiya, T. Miyoshi
{"title":"Quantum transport modeling in nano-scale devices","authors":"M. Ogawa, H. Tsuchiya, T. Miyoshi","doi":"10.1109/SISPAD.2002.1034568","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034568","url":null,"abstract":"We present results and describe progress we have made in the development of our quantum transport modeling for nanoscale devices. Our simulation is based upon either the nonequilibrium Green's function method (NEGF) or the quantum correction (QC) associated with the density gradient method (DG) and/or the effective potential method (EP). We show the results of our modeling methods applied to several devices and discuss issues faced with regards to computational time, open boundary conditions, and their relationship to self-consistent solution of the Poisson-NEGF equations. We also discuss those for efficiently tailored QC Monte Carlo techniques.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127490732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Statistical fluctuation analysis by Monte Carlo ion implantation method 蒙特卡罗离子注入法的统计涨落分析
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034551
Y. Oda, Y. Ohkura, K. Suzuki, S. Ito, H. Amakawa, K. Nishi
{"title":"Statistical fluctuation analysis by Monte Carlo ion implantation method","authors":"Y. Oda, Y. Ohkura, K. Suzuki, S. Ito, H. Amakawa, K. Nishi","doi":"10.1109/SISPAD.2002.1034551","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034551","url":null,"abstract":"This paper shows a new statistical fluctuation analysis method by Monte Carlo ion implantation and investigates Vt fluctuations due to statistical variation of dopant profile by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFETs efficiently.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"25 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115996714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Hot carrier induced degradation due to multi-phonon mechanism analyzed by lattice and device Monte Carlo coupled simulation 采用点阵和器件蒙特卡罗耦合模拟分析了多声子热载流子诱导降解的机理
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034564
S. Ho, Y. Ohkura, M. Takuya, J. Prasad, N. Nakamura, S. Kubo
{"title":"Hot carrier induced degradation due to multi-phonon mechanism analyzed by lattice and device Monte Carlo coupled simulation","authors":"S. Ho, Y. Ohkura, M. Takuya, J. Prasad, N. Nakamura, S. Kubo","doi":"10.1109/SISPAD.2002.1034564","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034564","url":null,"abstract":"A new multi-phonon model for hydrogen desorption at Si/SiO/sub 2/ interface due to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte Cairo method is coupled with Device Monte Cairo method by using a mediator-based common software platform. The power law between interface trap density and time (N/sub it//spl prop/t/sup a/) is demonstrated which shows good agreement with experimental results. It is shown that the multi-phonon mechanism has significant effect on reliability of MOS devices with ultra-short gate under low applied voltage.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123719757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
System level model of damping effects for highly perforated torsional microstructures 高穿孔扭转微结构阻尼效应的系统级模型
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034529
G. Schrag, R. Sattler, G. Wachutka
{"title":"System level model of damping effects for highly perforated torsional microstructures","authors":"G. Schrag, R. Sattler, G. Wachutka","doi":"10.1109/SISPAD.2002.1034529","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034529","url":null,"abstract":"We propose a mixed-level simulation scheme for squeeze film damping (SQFD) effects in microdevices, which makes it possible to include damping effects in system-level models of entire microsystems in a natural, physical-based, and flexible way. Our approach allows also for complex geometries, large deflections and coupling to other energy and signal domains. Applying the methodology to torsional structures yields results which are in excellent agreement with accurate FEM simulations based on the 3D Navier-Stokes equations, thus demonstrating the practicality and quality of our approach. For device geometries with densely distributed perforations we propose a further order reduction by merging adjacent holes in one equivalent network element; in this way we are able to simulate highly perforated structures at affordable computational expense. The predictive simulation of an industrial microrelay featuring 3000 perforations validated by experimental analysis, illustrates the power of our methodology.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133533568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications 射频应用中应变si /SiGe nMODFET标度的综合仿真研究
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034516
Q. Ouyang, S. Koester, J. Chu, A. Grill, S. Subbanna, D.A. Hennan
{"title":"A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications","authors":"Q. Ouyang, S. Koester, J. Chu, A. Grill, S. Subbanna, D.A. Hennan","doi":"10.1109/SISPAD.2002.1034516","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034516","url":null,"abstract":"2-dimensional (2-D) device simulations have been performed to study the scaling of strained-Si/SiGe nMODFETs. Device fabrication has been conducted to verify the simulation results. It is found that lateral scaling alone cannot improve the device performance. In order to achieve high speed (fT > 300 GHz), acceptable voltage gain (> 10) and good turnoff characteristics (> 1000) for RF applications, vertical scaling of the layer structure and source/drain junctions is also required. Preliminary experimental results support the scaling theory.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132943521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Impact of electron heat conductivity on electron energy flux 电子热导率对电子能量通量的影响
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034538
K. Matsuzawa
{"title":"Impact of electron heat conductivity on electron energy flux","authors":"K. Matsuzawa","doi":"10.1109/SISPAD.2002.1034538","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034538","url":null,"abstract":"Equations in the hydrodynamic model were evaluated by direct calculation of the drift, diffusion, and scattering terms obtained by separating the motion of particles in Monte Carlo simulations. It was confirmed that the conservation equations for momentum and energy were constructed adequately. However, it was found that an artificial operation was necessary for describing the energy flux equation. Namely, the parameter of the Wiedemann-Franz law for heat conductivity could be chosen so that the underestimations of the drift and diffusion terms in the energy flux equation cancelled each other. It is shown that this parameter influences the electron temperature in a 50 nm gate nMOSFET.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115016743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomistic simulation of RTA annealing for shallow junction formation characterizing both BED and TED 表征BED和TED的浅结形成的RTA退火原子模拟
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034532
Min Yu, Ru Huang, Xing Zhang, Yangyuan Wang, H. Oka
{"title":"Atomistic simulation of RTA annealing for shallow junction formation characterizing both BED and TED","authors":"Min Yu, Ru Huang, Xing Zhang, Yangyuan Wang, H. Oka","doi":"10.1109/SISPAD.2002.1034532","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034532","url":null,"abstract":"*Email: yum@ ime.pku.ed u.cn Abstract An atomistic model for annealing simulation is presented. To well simulate both BED (Boron Enhanced Diffusion)\"' and TED (Transient Enhanced Diffusion), the surface emission model, which describes the emission of point defects from surface during annealing, is implemented. The simulation is carried out for RTA annealing (1OOO'C or l 0 5 O T ) after B implantation. The implantation energy varies from 0.5kev to 13kev. Agreements between simulation and SIMS data are achieved. Both BED and TED phenomena are characterized. The Enhancement of diffusion is discussed.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115108571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Modeling of the diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/ 注入硼在应变Si/Si/sub - 1-x/Ge/sub -x/中的扩散模拟
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034557
Huilong Zhu, K. Lee, O. Dokumaci, P. Ronsheim, F. Cardone, S. Hegde, U. Mantz, P. Saunders
{"title":"Modeling of the diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/","authors":"Huilong Zhu, K. Lee, O. Dokumaci, P. Ronsheim, F. Cardone, S. Hegde, U. Mantz, P. Saunders","doi":"10.1109/SISPAD.2002.1034557","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034557","url":null,"abstract":"The diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/ is investigated. A continuum segregation model (CSM) is presented to describe the phenomenon of B pile-up into the germanium profile. An analytic formula is obtained for Ge pre-amorphization and a modified pre-amorphization model is used in TSUPREM4 in order to accurately model our measurement data. Our simulations of boron diffusion are in reasonable agreement with our SIMS data. Comparison of the CSM with the model of immobile boron-germanium clusters is also discussed.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132402553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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