S. Ho, Y. Ohkura, M. Takuya, J. Prasad, N. Nakamura, S. Kubo
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引用次数: 2
摘要
提出了一种新的多声子模型，用于多尺度模拟Si/SiO/sub / 2/界面热载流子对氢的解吸，该模型采用基于介质的通用软件平台，将Lattice Monte Cairo方法与Device Monte Cairo方法相结合。给出了界面陷阱密度与时间的幂律(N/sub / it//spl prop/t/sup / a/)，与实验结果吻合较好。结果表明，在低电压下，多声子机制对超短栅极MOS器件的可靠性有显著影响。
Hot carrier induced degradation due to multi-phonon mechanism analyzed by lattice and device Monte Carlo coupled simulation
A new multi-phonon model for hydrogen desorption at Si/SiO/sub 2/ interface due to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte Cairo method is coupled with Device Monte Cairo method by using a mediator-based common software platform. The power law between interface trap density and time (N/sub it//spl prop/t/sup a/) is demonstrated which shows good agreement with experimental results. It is shown that the multi-phonon mechanism has significant effect on reliability of MOS devices with ultra-short gate under low applied voltage.
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