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International Conferencre on Simulation of Semiconductor Processes and Devices最新文献

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TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET 3.3V I/O p-MOSFET热载流子降低的TCAD驱动漏极工程
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2003-03-01 DOI: 10.1109/SISPAD.2002.1034513
N. Miura, H. Hayashi, H. Komatsubara, A. Mochizuki, K. Fukuda
{"title":"TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET","authors":"N. Miura, H. Hayashi, H. Komatsubara, A. Mochizuki, K. Fukuda","doi":"10.1109/SISPAD.2002.1034513","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034513","url":null,"abstract":"We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and I/sub ON/, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129412474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications 基于漂移扩散的RF-MOSFET非准静态小信号响应建模
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034519
H. Ueno, S. Jinbou, H. Kawano, K. Morikawa, N. Nakayama, A. Miura-Mattausch, H. Mattausch
{"title":"Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications","authors":"H. Ueno, S. Jinbou, H. Kawano, K. Morikawa, N. Nakayama, A. Miura-Mattausch, H. Mattausch","doi":"10.1109/SISPAD.2002.1034519","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034519","url":null,"abstract":"A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed based on the drift-diffusion approximation enables us to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to f/sub T//2, which is much higher than the f/sub T//10 previously estimated.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125218991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Self-consistent single-particle simulation 自洽单粒子模拟
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034541
F.M. Bufler, C. Zechner, A. Schenk, W. Fichtner
{"title":"Self-consistent single-particle simulation","authors":"F.M. Bufler, C. Zechner, A. Schenk, W. Fichtner","doi":"10.1109/SISPAD.2002.1034541","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034541","url":null,"abstract":"Self-consistent single-particle Monte Carlo device simulations are presented. Self-consistency is achieved by an iterative coupling-scheme of single-particle frozen-field Monte Carlo simulations with solutions of the nonlinear Poisson equation. As an example a realistic 0.1 /spl mu/m n-MOSFET obtained from process simulation with maximum doping levels of about 2.5 /spl times/ 10/sup 20/ cm/sup -3/ is simulated. It is found that the resulting drain current is independent of the length of the time interval per iteration (provided that it is not too small) and independent of the density in the regions not visited by the particles taken either from a drift-diffusion or a hydrodynamic simulation. Therefore the self-consistent single-particle Monte Carlo simulation is an accurate and robust simulation tool for the quasi-ballistic regime in sub 0.1 /spl mu/m MOSFETs.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121016911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Integrated atomistic process and device simulation of decananometre MOSFETs 十纳米mosfet的集成原子制程及器件模拟
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034523
A. Asenov, M. Jaraíz, S. Roy, G. Roy, F. Adamu-Lema, A. R. Brown, V. Moroz, R. Gafiteanu
{"title":"Integrated atomistic process and device simulation of decananometre MOSFETs","authors":"A. Asenov, M. Jaraíz, S. Roy, G. Roy, F. Adamu-Lema, A. R. Brown, V. Moroz, R. Gafiteanu","doi":"10.1109/SISPAD.2002.1034523","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034523","url":null,"abstract":"In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomistic simulator, which incorporates density gradient quantum corrections. The overall methodology is illustrated in the atomistic process and device simulation of a well behaved 35 nm physical gate length MOSFET reported by Toshiba.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123185652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
3D MOSFET simulation considering long-range Coulomb potential effects for analyzing statistical dopant-induced fluctuations associated with atomistic process simulator 考虑远程库仑势效应的三维MOSFET模拟，用于分析与原子过程模拟器相关的统计掺杂诱导波动
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034524
T. Ezaki, T. Ikezawa, A. Notsu, K. Tanaka, M. Hane
{"title":"3D MOSFET simulation considering long-range Coulomb potential effects for analyzing statistical dopant-induced fluctuations associated with atomistic process simulator","authors":"T. Ezaki, T. Ikezawa, A. Notsu, K. Tanaka, M. Hane","doi":"10.1109/SISPAD.2002.1034524","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034524","url":null,"abstract":"We have developed a realistic 3-D process/device simulation method for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. We used it to investigate the variations in characteristics of a sub-100 nm CMOS device induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain region or channel region.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114238528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Extraction of 3D interconnect impedances using edge elements without gauge condition 无规条件下利用边缘元件提取三维互连阻抗
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034537
F. Charlet, J. Carpentier
{"title":"Extraction of 3D interconnect impedances using edge elements without gauge condition","authors":"F. Charlet, J. Carpentier","doi":"10.1109/SISPAD.2002.1034537","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034537","url":null,"abstract":"We present an efficient simulation method for the extraction of frequency dependent interconnect impedances. Our method is based on a symmetrical (A,T) system approximated by the use of edge finite elements. It doesn't need gauge conditions and the matrix system has good convergence properties. Qualitative results on eddy current and return current effects are presented and a first numerical validation is made.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132382686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Numerical simulation of a two-particle wave function in quantum wires 量子线中两粒子波函数的数值模拟
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034545
S. Reggiani, A. Bertoni, M. Rudan
{"title":"Numerical simulation of a two-particle wave function in quantum wires","authors":"S. Reggiani, A. Bertoni, M. Rudan","doi":"10.1109/SISPAD.2002.1034545","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034545","url":null,"abstract":"As the key requirement of a quantum computer is the creation and exploitation of entanglement, a detailed study of entangled states has been carried out with reference to a solid-state system based on coupled quantum wires. A brief review of the basic gates is given first, based on preliminary investigations, followed by the analysis of electrons running along coupled quantum wires. The particle dynamics has numerically been simulated by means of a time-dependent Schrodinger solver applied to a two-particle system. Results are reported showing entangled states created by means of suitable quantum-gate networks. Starting from these fundamental results, the complexity of some interesting circuits is addressed, showing both the application of the universal set of quantum gates to complex algorithms and the computational speedup achieved within the proposed implementation.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130039561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs 亚100nm phemt的栅隧穿与冲击电离
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034536
K. Kalna, A. Asenov
{"title":"Gate tunnelling and impact ionisation in sub 100 nm PHEMTs","authors":"K. Kalna, A. Asenov","doi":"10.1109/SISPAD.2002.1034536","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034536","url":null,"abstract":"Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in selfconsistent MC simulation. Thermionic tunnelling starts at very low drain voltages but then quickly saturates. Therefore, it should not drastically affect the performance of scaled devices. Impact ionization threshold occurs at greater drain voltages which should assure a reasonable operation voltage scale for all scaled PHEMTs.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132978793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Hot-carrier energy distribution model and its application to the MOSFET substrate current 热载流子能量分布模型及其在MOSFET衬底电流中的应用
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034544
C. Lee, Gyo-Young Jin, Keun-Ho Lee, J. Kong, Wonsok Lee, Yong-han Rho, E. Kan, R. Dutton
{"title":"Hot-carrier energy distribution model and its application to the MOSFET substrate current","authors":"C. Lee, Gyo-Young Jin, Keun-Ho Lee, J. Kong, Wonsok Lee, Yong-han Rho, E. Kan, R. Dutton","doi":"10.1109/SISPAD.2002.1034544","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034544","url":null,"abstract":"The lack of information for carrier energy distributions in the continuum drift-diffusion (DD) or hydro-dynamic (HD) device simulation has been a major obstacle in simulating the physical phenomena related to hot carriers. In this study, a practical construction method of the hot-carrier energy distribution is proposed. Results from Monte-Carlo (MC) simulation in the uniform field distribution are utilized to construct the electron energy distributions (EED) for arbitrary device structures and field distributions in the continuum simulation. For the NIN structure, the electron-hole pair generation rate by impact ionization using the HD simulation employing the proposed method agrees well with that from the MC simulation. We have calculated the substrate currents of nMOSFETs without using any fitting parameters which agree very well with measurements.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124214939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation 用自一致硅/氧化物蒙特卡罗器件模拟MOSFET热载流子感应栅电流
International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034559
A. Ghetti
{"title":"MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation","authors":"A. Ghetti","doi":"10.1109/SISPAD.2002.1034559","DOIUrl":"https://doi.org/10.1109/SISPAD.2002.1034559","url":null,"abstract":"Hot electron transport in MOS transistors is investigated by means of a coupled silicon/oxide Monte Carlo (MC) simulation. First, a new MC simulator able to handle selfconsistently different materials is developed. Then, the impact of oxide transport on the gate current (I/sub G/) is analyzed comparing different injection models with experiments. It is shown that oxide transport plays an important role on I/sub G/ when the gate voltage is below the drain voltage (V/sub GS/<V/sub DS/). In this condition, coupled silicon/oxide (SI+OX) simulation is important to quantitatively assess I/sub G/. It is also shown that oxide scattering in the image force potential well does not significantly reduce I/sub G/. Furthermore, we propose a new injection model that empirically accounts for oxide scattering and that provides the same I/sub G/ of the SI+OX model, but with the simulation of the silicon channel only, thus enabling a significant reduction of simulation time.","PeriodicalId":249609,"journal":{"name":"International Conferencre on Simulation of Semiconductor Processes and Devices","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124387332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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