International Conferencre on Simulation of Semiconductor Processes and Devices最新文献_第7页

Characterization of multi-barrier tunneling diodes and vertical transistors using 2-D device simulation 多势垒隧道二极管和垂直晶体管的二维器件仿真表征

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034543

Kwan-Do Kim, Keun-Ho Lee, Seungjae Baik, Jun-Ha Lee, Tai-kyung Kim, J. Kong

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引用次数: 3

A new non-pair diffusion based dopant pile-up model for process designers and its prediction accuracy 一种新的基于非对扩散的工艺设计掺杂堆积模型及其预测精度

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034553

H. Hayashi, N. Miura, H. Komatsubara, M. Mochizuki, K. Fukuda

引用次数: 0

A novel CDM-like discharge effect during human body model (HBM) ESD stress 人体模型(HBM)静电放电时的一种新型cdm样放电效应

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034530

V. Axelrad, Y. Huh, J.W. Chen, P. Bendix

引用次数: 4

Monte Carlo simulation of electron transport in a carbon nanotube 碳纳米管中电子输运的蒙特卡罗模拟

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034572

G. Pennington, N. Goldsman

引用次数: 2

Ensemble Monte Carlo/molecular dynamics simulation of inversion layer mobility in Si MOSFETs - effects of substrate impurity Si mosfet中反转层迁移率的集合蒙特卡罗/分子动力学模拟——衬底杂质的影响

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034508

Y. Kamakura, H. Ryouke, K. Taniguchi

引用次数: 8

Enhanced advancing front Delaunay meshing in TCAD 在TCAD中增强了推进前Delaunay网格

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034526

P. Fleischmann, S. Selberherr

引用次数: 11

Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model 利用增强型流体动力输运模型模拟“良好回火”SOI MOSFET

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-09-04 DOI: 10.1109/SISPAD.2002.1034550

M. Gritsch, H. Kosina, Tibor Grasser, Siegfried Selberherr

引用次数: 5