MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI:10.1109/SISPAD.2002.1034559

A. Ghetti

引用次数: 4

Abstract

Hot electron transport in MOS transistors is investigated by means of a coupled silicon/oxide Monte Carlo (MC) simulation. First, a new MC simulator able to handle selfconsistently different materials is developed. Then, the impact of oxide transport on the gate current (I/sub G/) is analyzed comparing different injection models with experiments. It is shown that oxide transport plays an important role on I/sub G/ when the gate voltage is below the drain voltage (V/sub GS/

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用自一致硅/氧化物蒙特卡罗器件模拟MOSFET热载流子感应栅电流

利用硅/氧化物耦合蒙特卡罗(MC)模拟研究了MOS晶体管中的热电子输运。首先，研制了一种能自洽处理不同材料的MC模拟器。然后，对比不同注入模型和实验，分析了氧化物输运对栅极电流(I/sub G/)的影响。结果表明，当栅极电压低于漏极电压(V/sub GS/

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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