Hot carrier induced degradation due to multi-phonon mechanism analyzed by lattice and device Monte Carlo coupled simulation

Abstract

A new multi-phonon model for hydrogen desorption at Si/SiO/sub 2/ interface due to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte Cairo method is coupled with Device Monte Cairo method by using a mediator-based common software platform. The power law between interface trap density and time (N/sub it//spl prop/t/sup a/) is demonstrated which shows good agreement with experimental results. It is shown that the multi-phonon mechanism has significant effect on reliability of MOS devices with ultra-short gate under low applied voltage.