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2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Assessing Radiation Hardness of SIC MOS Structures SIC - MOS结构辐射硬度评估
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328726
J. Moreno, E. Cordero, D. López, S. Massetti, M. Cabello, V. Soler, P. Godignon, E. Maset
{"title":"Assessing Radiation Hardness of SIC MOS Structures","authors":"J. Moreno, E. Cordero, D. López, S. Massetti, M. Cabello, V. Soler, P. Godignon, E. Maset","doi":"10.1109/RADECS45761.2018.9328726","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328726","url":null,"abstract":"It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134553843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Heavy Ion Irradiation Test Results on Power Diodes 功率二极管重离子辐照试验结果分析
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328674
M. Mauguet, L. Azema, E. L. Goulven, A. Varotsou, X. Marie, D. Lagarde, C. Boatella-Polo
{"title":"Analysis of Heavy Ion Irradiation Test Results on Power Diodes","authors":"M. Mauguet, L. Azema, E. L. Goulven, A. Varotsou, X. Marie, D. Lagarde, C. Boatella-Polo","doi":"10.1109/RADECS45761.2018.9328674","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328674","url":null,"abstract":"A selection of power diodes with a large range of electrical and structural characteristics was irradiated with heavy ions. The data are analyzed based on 4 main behaviors of the leakage current recorded during irradiation. The types and occurrences of failures are studied considering the material (silicon, silicon carbide) and the structure (Schottky or PN junction) of the diode. The derating schemes for Si, SiC Schottky diode and ultrafast rectifiers are also discussed.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131341620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The RADECS 2018 Topical Day (Short Courses) RADECS 2018主题日(短期课程)
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/radecs45761.2018.9328722
{"title":"The RADECS 2018 Topical Day (Short Courses)","authors":"","doi":"10.1109/radecs45761.2018.9328722","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328722","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"46 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113965630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Latent Single-Event Latchup-induced damage in Complementary Metal-Oxide- Semiconductor 互补金属氧化物半导体中潜在的单事件锁存诱发损伤
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328692
A. Tsirkov, D. Bobrovsky, A. Pechenkin, A. Chumakov, G. Sorokoumov
{"title":"Latent Single-Event Latchup-induced damage in Complementary Metal-Oxide- Semiconductor","authors":"A. Tsirkov, D. Bobrovsky, A. Pechenkin, A. Chumakov, G. Sorokoumov","doi":"10.1109/RADECS45761.2018.9328692","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328692","url":null,"abstract":"Experimental results are presented for different CMOS ICs, evidencing latent damage induced by single event latch-up. Additive and non-additive destructive effects are analyzed.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133913326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Phenomenological Approach to Simulation of Proton Indirect-Ionization Induced Upset Cross Sections in Commercial Memory Circuits 用现象学方法模拟商业存储电路中质子间接电离引起的扰动截面
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328730
A. M. Galimov, G. Protopopov, I. A. Lyakhov, V. Anashin, O. S. Pivko, A. V. Alexandrov, G. Zebrev
{"title":"Phenomenological Approach to Simulation of Proton Indirect-Ionization Induced Upset Cross Sections in Commercial Memory Circuits","authors":"A. M. Galimov, G. Protopopov, I. A. Lyakhov, V. Anashin, O. S. Pivko, A. V. Alexandrov, G. Zebrev","doi":"10.1109/RADECS45761.2018.9328730","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328730","url":null,"abstract":"A procedure for proton-induced upset cross section simulation based on the limited heavy ion experimental data is proposed. Validation and comparison to the existing techniques are provided as well.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133360922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct Experimental Performance Comparison of Two Microprocessors for the Efficiency Evaluation of Single Event Effects Mitigation Techniques 两个微处理器的直接实验性能比较，以评估单事件影响缓解技术的效率
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328658
M. Gorbunov, A. A. Antonov, P. A. Monakhov, V. Anashin, Andrey A. Klyayn, A. Koziukov, E. Imametdinov, Elena V. Marina
{"title":"Direct Experimental Performance Comparison of Two Microprocessors for the Efficiency Evaluation of Single Event Effects Mitigation Techniques","authors":"M. Gorbunov, A. A. Antonov, P. A. Monakhov, V. Anashin, Andrey A. Klyayn, A. Koziukov, E. Imametdinov, Elena V. Marina","doi":"10.1109/RADECS45761.2018.9328658","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328658","url":null,"abstract":"We present the direct experimental vulnerability comparison of two microprocessor designs with different Single Event Effects (SEE) mitigation techniques at different heavy ion fluxes. The trade-off between the performance, fault-tolerance and power consumption is considered. We introduce the Mean Fluence Between Failures (MFBF) metric for the vulnerability comparison.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125001604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation Test Results in Newly Developed Super-Junction Power MOSFETs 新型超结功率mosfet的辐射测试结果
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328675
E. Mizuta, Y. Nakada, S. Kuboyama, M. Inoue, Y. Kumagai, S. Tatemichi, T. Shiigi, T. Watashima, H. Shindou
{"title":"Radiation Test Results in Newly Developed Super-Junction Power MOSFETs","authors":"E. Mizuta, Y. Nakada, S. Kuboyama, M. Inoue, Y. Kumagai, S. Tatemichi, T. Shiigi, T. Watashima, H. Shindou","doi":"10.1109/RADECS45761.2018.9328675","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328675","url":null,"abstract":"We report the results of single-event effects test using heavy ions and total ionizing dose test using γ-ray in JAXA qualified super-junction power MOSFETs manufactured by Fuji electric company and COTS super- junction power MOSFETs.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129424689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realistic Radiation and PVTA fault simulation for OFDM synchronization OFDM同步的真实辐射和PVTA故障仿真
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328670
K. Niederkleine, Theodor Hillebrand, S. Paul
{"title":"Realistic Radiation and PVTA fault simulation for OFDM synchronization","authors":"K. Niederkleine, Theodor Hillebrand, S. Paul","doi":"10.1109/RADECS45761.2018.9328670","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328670","url":null,"abstract":"Semiconductor design for radiation environments usualy applies worst-case estimations to calculate the needs for reliable operation. The ability to simulate components for any mission is an advantage in this process and helps to save costs.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The 2018 RADECS Association - Yuri Gagarin Award 2018年RADECS协会尤里·加加林奖
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/radecs45761.2018.9328723
{"title":"The 2018 RADECS Association - Yuri Gagarin Award","authors":"","doi":"10.1109/radecs45761.2018.9328723","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328723","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124138640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation Testing and Characterization of the TPS50601A-SP Radiation Hardened Buck Converter TPS50601A-SP抗辐射降压变换器的辐射测试与特性
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI: 10.1109/RADECS45761.2018.9328718
H. Torres, J. Cruz-Colon, V. Narayanan, J. Valle, R. Baumann
{"title":"Radiation Testing and Characterization of the TPS50601A-SP Radiation Hardened Buck Converter","authors":"H. Torres, J. Cruz-Colon, V. Narayanan, J. Valle, R. Baumann","doi":"10.1109/RADECS45761.2018.9328718","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328718","url":null,"abstract":"Single Events Effect (SEE) and Total Ionizing Dose (TID) characterization results for the new TPS50601A-SP, 6 A, DC-DC converter from Texas Instruments are presented. The TPS50601A-SP is Radiation Hardness Assured (RHA) up to a TID=100 krad (Si) for HDR and LDR and SEL-SEB-SEGR free up to LET<inf>EFF</inf>=75 MeV-cm<sup>2</sup>/mg. SET's were characterized up to LET<inf>EFF</inf>=65 MeV-cm<sup>2</sup>/mg.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125258826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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