A. Tsirkov, D. Bobrovsky, A. Pechenkin, A. Chumakov, G. Sorokoumov
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Latent Single-Event Latchup-induced damage in Complementary Metal-Oxide- Semiconductor
Experimental results are presented for different CMOS ICs, evidencing latent damage induced by single event latch-up. Additive and non-additive destructive effects are analyzed.
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