用现象学方法模拟商业存储电路中质子间接电离引起的扰动截面

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI:10.1109/RADECS45761.2018.9328730

A. M. Galimov, G. Protopopov, I. A. Lyakhov, V. Anashin, O. S. Pivko, A. V. Alexandrov, G. Zebrev

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引用次数: 0

摘要

提出了一种基于有限重离子实验数据的质子诱导扰动截面模拟方法。并对现有技术进行了验证和比较。

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Phenomenological Approach to Simulation of Proton Indirect-Ionization Induced Upset Cross Sections in Commercial Memory Circuits

A procedure for proton-induced upset cross section simulation based on the limited heavy ion experimental data is proposed. Validation and comparison to the existing techniques are provided as well.

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来源期刊

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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