Analysis of Heavy Ion Irradiation Test Results on Power Diodes

Abstract

A selection of power diodes with a large range of electrical and structural characteristics was irradiated with heavy ions. The data are analyzed based on 4 main behaviors of the leakage current recorded during irradiation. The types and occurrences of failures are studied considering the material (silicon, silicon carbide) and the structure (Schottky or PN junction) of the diode. The derating schemes for Si, SiC Schottky diode and ultrafast rectifiers are also discussed.