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Characterisation and Control of Defects in Semiconductors最新文献

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Characterizing defects with ion beam analysis and channeling techniques 用离子束分析和通道技术表征缺陷
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch11
L. Pereira, A. Vantomme, U. Wahl
{"title":"Characterizing defects with ion beam analysis and channeling techniques","authors":"L. Pereira, A. Vantomme, U. Wahl","doi":"10.1049/pbcs045e_ch11","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch11","url":null,"abstract":"This chapter deals with the use of ion beam analysis (IBA) techniques, in particular in channeling geometry, to study defects in semiconductors. After a tutorial (Section 11.1) introducing the basic principles of IBA and channeling techniques, selected examples of their use to characterize defects (e.g., lattice location of dopants and implantation damage) are described in Section 11.2. Finally, Section 11.3 consists of a brief outlook into future developments and applications.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"27 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121010138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography 用原子探针层析成像技术研究半导体缺陷的三维原子尺度
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch9
L. Rigutti, D. Blavette
{"title":"Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography","authors":"L. Rigutti, D. Blavette","doi":"10.1049/pbcs045e_ch9","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch9","url":null,"abstract":"In this chapter, the role of APT in the investigation of extended defects and solute segregation in semiconductors is discussed on the basis of several salient studies mainly carried out in our laboratory (Groupe de Physique des Materiaux) and dealing with one-dimensional (1D) (dislocations), two-dimensional (2D) (interfaces, SFs, GBs) and 3D defects (clusters, QDs). The principles of APT are first presented including a discussion of limitations in terms of spatial resolution and quantitativity. Results and performances are also compared to those of SIMS.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133856233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Back Matter 回到问题
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_bm
{"title":"Back Matter","authors":"","doi":"10.1049/pbcs045e_bm","DOIUrl":"https://doi.org/10.1049/pbcs045e_bm","url":null,"abstract":"","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115041549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion-beam modification of semiconductors 半导体的离子束修饰
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch10
K. Nordlund, S. Kucheyev
{"title":"Ion-beam modification of semiconductors","authors":"K. Nordlund, S. Kucheyev","doi":"10.1049/pbcs045e_ch10","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch10","url":null,"abstract":"In this chapter, we give an overview of the basic physics and experimental method behind the conventional ion-beam modification of semiconductors. In particular, we describe the basic understanding of the keV ion implantation process used for doping Si and the fascinating amount of materials physics involved in the path from the initial implantation to the dopant activation. We also describe two recent developments related to the physics of implantation: the mechanisms of surface ripple formation and time-resolved experiments used to shed new light on defect migration and interaction processes.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123113788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic resonance methods 磁共振法
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch4
J. Cantin
{"title":"Magnetic resonance methods","authors":"J. Cantin","doi":"10.1049/pbcs045e_ch4","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch4","url":null,"abstract":"In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130356804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
First principles methods for defects: state-of-the-art and emerging approaches 缺陷的第一性原理方法:最新的和新兴的方法
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch7
E. Ertekin, H. Raebiger
{"title":"First principles methods for defects: state-of-the-art and emerging approaches","authors":"E. Ertekin, H. Raebiger","doi":"10.1049/pbcs045e_ch7","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch7","url":null,"abstract":"This chapter describes typical approaches and levels of approximation and the common sources of uncertainties encountered. On one hand, it provides a generalized framework for carrying out defect calculations. On the other hand, it is intended as a guide to experimentalists how to read theory papers, assess conclusions, and interact with theorists.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128800633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Luminescence from point defects in widebandgap, direct-gap semiconductors 宽禁带、直接禁带半导体中点缺陷的发光
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch2
M. Reshchikov
{"title":"Luminescence from point defects in widebandgap, direct-gap semiconductors","authors":"M. Reshchikov","doi":"10.1049/pbcs045e_ch2","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch2","url":null,"abstract":"In this chapter, phenomenological theories of PL are presented and compared with experimental results on PL from wide-bandgap semiconductors, primarily GaN. Types of electron transitions leading to PL are defined in Section 2.2. The rate equations model and the configuration-coordinate (CC) model are presented in Section 2.3. In particular, we will show how to estimate the concentrations of defects and reveal their important characteristics such as the energy levels, carrier capture coefficients, electron-phonon coupling strength, excited states.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131376319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Positron annihilation spectroscopy, experimental and theoretical aspects 正电子湮没光谱，实验和理论方面
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch6
J. Slotte, I. Makkonen, F. Tuomisto
{"title":"Positron annihilation spectroscopy, experimental and theoretical aspects","authors":"J. Slotte, I. Makkonen, F. Tuomisto","doi":"10.1049/pbcs045e_ch6","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch6","url":null,"abstract":"In summary, PAS gives microscopic information about vacancy defects in semiconductors in the concentration range 10 15 -10 19 cm -3 . The positron lifetime is the fingerprint of the open volume associated with a defect, and it can be used to identify mono- and divacancies and larger vacancy clusters. Doppler broadening of the annihilation radiation, on the other hand, can be used to identify the nature of the atoms surrounding the vacancy. Consequently, vacancies on different sub lattices of a compound semiconductor can be distinguished, and impurities associated with the vacancies can be identified. The charge state of a vacancy defect can be determined by the temperature dependence of the positron -trapping coefficient, and positron localization into Rydberg states around negative centers yields information about ionic acceptors that have no open volume. Importantly, as shown in this chapter, the methods based on positron annihilation are not restricted by the nature or physical dimensions of the semiconductor. Defects can be studied in narrow- and wide-bandgap semiconductor materials in samples of any conductivity. Bulk crystals as well as thin films can be subjected to the experiments and defects identified.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133623685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscopy of defects in semiconductors 半导体缺陷显微镜
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch8
F. Massabuau, J. Bruckbauer, C. Trager-Cowan, R. Oliver
{"title":"Microscopy of defects in semiconductors","authors":"F. Massabuau, J. Bruckbauer, C. Trager-Cowan, R. Oliver","doi":"10.1049/pbcs045e_ch8","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch8","url":null,"abstract":"In this chapter, the authors discuss microscopy techniques that can be useful in addressing defects in semiconductors. They focus on three main families: scanning probe microscopy, scanning electron microscopy and transmission electron microscopy. They first address the basic principles of the selected microscopy techniques In discussions of image formation, they elucidate the mechanisms by which defects are typically imaged in each technique. Then, in the latter part of the chapter, they describe some key examples of the application of microscopy to semiconductor materials, addressing both point and extended defects and both two-dimensional (2D) and three-dimensional (3D) materials.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126027874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The role of muons in semiconductor research 介子在半导体研究中的作用
Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI: 10.1049/pbcs045e_ch5
P. W. Mengyan
{"title":"The role of muons in semiconductor research","authors":"P. W. Mengyan","doi":"10.1049/pbcs045e_ch5","DOIUrl":"https://doi.org/10.1049/pbcs045e_ch5","url":null,"abstract":"The aim of this chapter is to provide an introduction and overview of using muons to study defects in semiconductors for an audience with a background in material science. First is a general tutorial to relevant models and discussion of the muon-based techniques that have been important to the semiconductor field. The latter portion of this chapter highlights results from selected studies on semiconductors to demonstrate and describe some contributions that muon spin research (SR) techniques have made to the semiconductor community in recent years.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122643958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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