半导体缺陷显微镜

F. Massabuau, J. Bruckbauer, C. Trager-Cowan, R. Oliver
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引用次数: 4

摘要

在本章中,作者讨论了显微镜技术,可用于解决半导体缺陷。他们集中在三个主要的家族:扫描探针显微镜,扫描电子显微镜和透射电子显微镜。在图像形成的讨论中,他们首先阐述了所选显微镜技术的基本原理,阐明了每种技术中典型缺陷成像的机制。然后,在本章的后半部分,他们描述了显微镜在半导体材料中应用的一些关键例子,解决了点缺陷和扩展缺陷以及二维(2D)和三维(3D)材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microscopy of defects in semiconductors
In this chapter, the authors discuss microscopy techniques that can be useful in addressing defects in semiconductors. They focus on three main families: scanning probe microscopy, scanning electron microscopy and transmission electron microscopy. They first address the basic principles of the selected microscopy techniques In discussions of image formation, they elucidate the mechanisms by which defects are typically imaged in each technique. Then, in the latter part of the chapter, they describe some key examples of the application of microscopy to semiconductor materials, addressing both point and extended defects and both two-dimensional (2D) and three-dimensional (3D) materials.
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