磁共振法

J. Cantin
{"title":"磁共振法","authors":"J. Cantin","doi":"10.1049/pbcs045e_ch4","DOIUrl":null,"url":null,"abstract":"In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Magnetic resonance methods\",\"authors\":\"J. Cantin\",\"doi\":\"10.1049/pbcs045e_ch4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.\",\"PeriodicalId\":247105,\"journal\":{\"name\":\"Characterisation and Control of Defects in Semiconductors\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Characterisation and Control of Defects in Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/pbcs045e_ch4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Characterisation and Control of Defects in Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/pbcs045e_ch4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

在本章中,我们将重点研究半导体材料中点缺陷的EPR研究。事实上,在抗磁性材料中,杂质、空位、反位及其复合物可能表现出有利于未配对电子的局部电子重构,因此,这些缺陷具有非零电子自旋。当然,点缺陷也可能在S = 0状态下存在,然后处于EPR沉默状态。然而,在半导体中,大多数点缺陷在隙中都有几个电荷态,通常每个电荷态对应一个不同的自旋态。通过电极化或光照射改变缺陷的电荷状态是EPR显示和检测缺陷的有效手段。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Magnetic resonance methods
In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信