{"title":"磁共振法","authors":"J. Cantin","doi":"10.1049/pbcs045e_ch4","DOIUrl":null,"url":null,"abstract":"In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.","PeriodicalId":247105,"journal":{"name":"Characterisation and Control of Defects in Semiconductors","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Magnetic resonance methods\",\"authors\":\"J. Cantin\",\"doi\":\"10.1049/pbcs045e_ch4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.\",\"PeriodicalId\":247105,\"journal\":{\"name\":\"Characterisation and Control of Defects in Semiconductors\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Characterisation and Control of Defects in Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/pbcs045e_ch4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Characterisation and Control of Defects in Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/pbcs045e_ch4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.