缺陷的第一性原理方法:最新的和新兴的方法

Characterisation and Control of Defects in Semiconductors Pub Date : 2019-09-30 DOI:10.1049/pbcs045e_ch7

E. Ertekin, H. Raebiger

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引用次数: 1

摘要

本章描述了典型的逼近方法和逼近水平，以及遇到的不确定性的常见来源。一方面，它为缺陷计算提供了一个通用的框架。另一方面，它的目的是作为一个指导实验如何阅读理论论文，评估结论，并与理论家互动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First principles methods for defects: state-of-the-art and emerging approaches

This chapter describes typical approaches and levels of approximation and the common sources of uncertainties encountered. On one hand, it provides a generalized framework for carrying out defect calculations. On the other hand, it is intended as a guide to experimentalists how to read theory papers, assess conclusions, and interact with theorists.

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Characterisation and Control of Defects in Semiconductors

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