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2018 International Semiconductor Conference (CAS)最新文献

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Fault Impact Assessment for Automotive Smart Power Products in an Electric Power Steering Application 汽车智能电源产品在电动助力转向应用中的故障影响评估
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539772
Jonas Stricker, C. Kain, Andi Buzo, Jérôme Kirscher, L. Maurer, G. Pelz
{"title":"Fault Impact Assessment for Automotive Smart Power Products in an Electric Power Steering Application","authors":"Jonas Stricker, C. Kain, Andi Buzo, Jérôme Kirscher, L. Maurer, G. Pelz","doi":"10.1109/SMICND.2018.8539772","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539772","url":null,"abstract":"The paper presents a methodology to propagate the consequences of random hardware faults in automotive smart power products to the application level. To accomplish this, the random hardware faults on chip level are assessed through fault injection into circuit simulations and are collapsed to come up with the relevant fault modes of a certain chip block. Then, these fault modes are propagated to the application level by injecting them into application simulations. The above is accomplished in an automated, seamless flow, which supports the engineering judgment in safety analysis by simulation results. The viability of the proposed approach is shown along a real-life example application (electric power steering) and a related smart power function (current measurement in the three phases). 1","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124538956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
From Pentacene Thin Film Transistor to Nanostructured Materials Synthesis for Green Organic-TFT 从五苯薄膜晶体管到绿色有机tft纳米结构材料的合成
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539760
C. Ravariu, Dan Eduard Mihalcscu, D. Istrati, M. Stanca
{"title":"From Pentacene Thin Film Transistor to Nanostructured Materials Synthesis for Green Organic-TFT","authors":"C. Ravariu, Dan Eduard Mihalcscu, D. Istrati, M. Stanca","doi":"10.1109/SMICND.2018.8539760","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539760","url":null,"abstract":"As first aim, a start Pentacene-Organic Thin Film Transistor - OTFT - is simulated to capture the static characteristics and to find the matching parameters with the experimental set-up. The current vectors validate the main conduction way and the OTFT functionality. In a second stage, the basic technology of an alternative polymer grafted on nanomaterial synthesis, is depicted. The Fe304 core-shell nanoparticles are assembled by an external shell of paraaminobenzoic acid (PABA). The final scope will be OTFT construction by these green technologies. The first step: the Fe3O4/PAbathin films synthesis and characterization, is successfully performed.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134316474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Multi-Scale Finite Element Modeling of CNT-Polymer-Composites 碳纳米管-聚合物-复合材料的多尺度有限元建模
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539799
Michael Schiebold, J. Mehner
{"title":"Multi-Scale Finite Element Modeling of CNT-Polymer-Composites","authors":"Michael Schiebold, J. Mehner","doi":"10.1109/SMICND.2018.8539799","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539799","url":null,"abstract":"A hierarchical multi-scale approach is used to model a composite consisting of carbon nanotubes and a polymer which can be used as pressure sensor matrix to prevent people from decubitus ulcer. Starting with the modeling of a carbon nanotube and the calculation of its equivalent cylinder properties. Subsequently the cylinders which replace the CNTs are randomly distributed in the polymer such that homogenization techniques leading to the mechanical properties of the composite.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129547744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparative Study of Sm and La Doped ZnO Properties Sm和La掺杂ZnO性能的比较研究
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539807
I. V. Tudose, P. Pascariu, C. Pachiu, F. Comanescu, M. Danila, R. Gavrila, E. Koudoumas, Mirela Petruta Suchea
{"title":"Comparative Study of Sm and La Doped ZnO Properties","authors":"I. V. Tudose, P. Pascariu, C. Pachiu, F. Comanescu, M. Danila, R. Gavrila, E. Koudoumas, Mirela Petruta Suchea","doi":"10.1109/SMICND.2018.8539807","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539807","url":null,"abstract":"Samarium and Lanthanum doped nanostructured ZnO thin films were grown onto glass substrates by spray deposition method. Influences of different concentrations (0% to 1%) of Sm and La on the ZnO structural and optical properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and by UV-VIS spectroscopy. X-ray diffraction studies revealed that the ZnO films have zincite crystalline structure and show a preferential growth orientation along (101) crystallographic orientation. Doping with Sm and La leads to changes of thin films crystallinity as well as their transparency in VIS region of electromagnetic spectrum. Increasing dopant concentration leads to slightly increased transparency.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127830038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscience; Micro and Nanophotonics (Poster Session) 纳米科学;微纳米光子学(海报部分)
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539436
{"title":"Nanoscience; Micro and Nanophotonics (Poster Session)","authors":"","doi":"10.1109/smicnd.2018.8539436","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539436","url":null,"abstract":"Nanoscience; Micro and Nanophotonics (Poster session)","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125803889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Simulations of Radiation Damage Effects in Active-Edge Silicon Pixel Sensors for High-Energy Physics Experiments 高能物理实验有源边缘硅像素传感器辐射损伤效应的数值模拟
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539752
D. Djamai, E. Gkougkousis, M. Chahdi, A. Lounis, S. Oussalah
{"title":"Numerical Simulations of Radiation Damage Effects in Active-Edge Silicon Pixel Sensors for High-Energy Physics Experiments","authors":"D. Djamai, E. Gkougkousis, M. Chahdi, A. Lounis, S. Oussalah","doi":"10.1109/SMICND.2018.8539752","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539752","url":null,"abstract":"High-energy physics experiments at the future CERN High Luminosity LHC (Large Hadron Collider) require highly segmented pixelated sensors of increased geometrical efficiency and the ability of withstanding extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at very high fluences (2×1016neq/cm2), using a recent three level trap model for p-type silicon material. Precise structural definition is achieved by investigating the doping profile of the devices via the Secondary Ion Mass Spectrometry technique. The breakdown voltage, and hole density distribution are studied as a function of radiation fluences.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126139554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated Circuits 3 Student Papers 集成电路3学生论文
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539838
{"title":"Integrated Circuits 3 Student Papers","authors":"","doi":"10.1109/smicnd.2018.8539838","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539838","url":null,"abstract":"Integrated Circuits 3 Student papers","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115903361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Pillar Doping Concentration for SiC Superjunction IGBTs SiC超结igbt的高柱掺杂浓度
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539824
H. Kang, F. Udrea
{"title":"High Pillar Doping Concentration for SiC Superjunction IGBTs","authors":"H. Kang, F. Udrea","doi":"10.1109/SMICND.2018.8539824","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539824","url":null,"abstract":"This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116605028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Kinetics of Lanthanum and Yttrium Doped Zirconia Crystallization by X-ray Powder Diffraction x射线粉末衍射法研究镧钇掺杂氧化锆结晶动力学
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539827
D. V. Dragut, V. Badilita, R.R. Piticesccu, A. Moţoc
{"title":"Kinetics of Lanthanum and Yttrium Doped Zirconia Crystallization by X-ray Powder Diffraction","authors":"D. V. Dragut, V. Badilita, R.R. Piticesccu, A. Moţoc","doi":"10.1109/SMICND.2018.8539827","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539827","url":null,"abstract":"The need to develop high performance materials is increasing nowadays. Due to its extraordinary range of properties, the yttria-doped zirconia is placed in a special place among the ceramic oxide systems. Co-doping with other rare earths oxides, such as Lantania is required in order to obtain better properties for some applications. The aim of the following paper is to determine the kinetic growth parameters of the crystallite according to the nature and the content of dopant used. The ZrO2 - 3Y203 - nLa203 (n = 3, 6, 9) samples were obtained through a hydrothermal process.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129450446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices 用于可调谐和可重构器件的MoS2单层金属-绝缘体过渡
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539834
M. Aldrigo, M. Dragoman, D. Masotti
{"title":"Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices","authors":"M. Aldrigo, M. Dragoman, D. Masotti","doi":"10.1109/SMICND.2018.8539834","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539834","url":null,"abstract":"In this paper, we show the electromagnetic design of a small patch antenna based on a molybdenum disulphide (MoS2) monolayer, with an area of only 22mm2, that exhibits high radiation efficiency and large tunability in microwaves at 10GHz thanks to a metal-insulator transition (MIT) induced by electrostatic gating. Furthermore, the MIT in MoS2is used to reconfigure a tunable carbon nanotube-based filter, conferring it different functionalities: low-pass, high-pass and bandpass around 2GHz, while its carbon nanotube varactors allow tuning the cutoff frequency or central frequency.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129379723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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