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MOS Dosimeter Based on Ge Nanocrystals in Hfo2 基于Hfo2中Ge纳米晶体的MOS剂量计
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539769
C. Palade, A. Slav, A. Lepadatu, I. Stavarache, I. Dascalescu, O. Cojocaru, T. Stoica, M. Ciurea, S. Lazanu
{"title":"MOS Dosimeter Based on Ge Nanocrystals in Hfo2","authors":"C. Palade, A. Slav, A. Lepadatu, I. Stavarache, I. Dascalescu, O. Cojocaru, T. Stoica, M. Ciurea, S. Lazanu","doi":"10.1109/SMICND.2018.8539769","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539769","url":null,"abstract":"Trilayer MOS capacitors gate HfO2 / floating gate of Ge nanocrystals in HfO2 / tunnel HfO2 / Si substrate were prepared in the aim to be used for the detection of ionizing radiation. Magnetron sputtering and rapid thermal annealing were used for their fabrication. Capacitance-voltage measurements showed that Ge nanocrystals are the most important charge storage centres in our structure. The possibility to use these trilayer MOS capacitors as dosimeters was investigated, and the sensitivity to a particle irradiation was extracted.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"123 44","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120825463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Power Supply Duty Cycling for Highly Constrained IoT Devices 高度受限物联网设备的电源占空比
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539832
A. Monti, E. Alata, D. Dragomirescu, A. Takacs
{"title":"Power Supply Duty Cycling for Highly Constrained IoT Devices","authors":"A. Monti, E. Alata, D. Dragomirescu, A. Takacs","doi":"10.1109/SMICND.2018.8539832","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539832","url":null,"abstract":"With increasing interest emerging towards the Internet of Things (loT) area, many new applications require embedded devices to integrate ever more sensors and communication interfaces while keeping hard constraints on battery life. We propose to go beyond classical radio duty cycling by disconnecting unused devices from the power supply, eliminating quiescent power consumption. Generalizing this technique to other sensors, we present a flexible IoT architecture, which we illustrate through an example industrial application and test results from an instrumented prototype.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"366 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126963353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Substrate Effect on the Morphology and Optical Properties of ZnO Nanorods Layers Grown by Microwave-Assisted Hydrothermal Method 衬底对微波辅助水热法制备ZnO纳米棒层形貌和光学性能的影响
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539811
A. Filip, V. Muşat, N. Țigău, A. Cantaragiu, C. Romanițan, M. Purica
{"title":"Substrate Effect on the Morphology and Optical Properties of ZnO Nanorods Layers Grown by Microwave-Assisted Hydrothermal Method","authors":"A. Filip, V. Muşat, N. Țigău, A. Cantaragiu, C. Romanițan, M. Purica","doi":"10.1109/SMICND.2018.8539811","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539811","url":null,"abstract":"The substrate effect on the morphology and optical properties of zinc oxide nanorods synthesized by microwave-assisted hydrothermal method have been investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-VIS-NIR optical absorption and reflecting spectroscopy. The band gap energy of the investigated samples was calculated from absorbance spectra in the (200–1100) nm wavelengths range.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116584137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanoscience and Nanoengineering 2 纳米科学与纳米工程2
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539755
{"title":"Nanoscience and Nanoengineering 2","authors":"","doi":"10.1109/smicnd.2018.8539755","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539755","url":null,"abstract":"Nanoscience and Nanoengineering 2","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121905089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Simulation of Piezoelectric Energy Harvester for Aerospace Applications 航天用压电能量采集器的设计与仿真
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539767
G. Muscalu, B. Firtat, S. Dinulescu, C. Moldovan, Adrian Anghelescu, Ciprian Vasile, Daniela Clobotaru, C. Hutanu
{"title":"Design and Simulation of Piezoelectric Energy Harvester for Aerospace Applications","authors":"G. Muscalu, B. Firtat, S. Dinulescu, C. Moldovan, Adrian Anghelescu, Ciprian Vasile, Daniela Clobotaru, C. Hutanu","doi":"10.1109/SMICND.2018.8539767","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539767","url":null,"abstract":"The focus of our study is to design piezoelectric harvesting cantilevers in order to convert environmental mechanical vibrations of low frequencies into electrical energy via direct piezoelectric effect. The final device consists of two arrays of cantilevers with a silicon substrate, a PZT-5H piezoelectric layer and a tungsten proof mass in order to obtain low resonant frequencies. The cantilevers are designed to work around 30, 45 and 90Hz and with an acceleration of 15.4, 8.6 and 1.5 m/s2respectively. All the models are simulated using COMSOL Multiphysics 5.2 from the point of view of resonant frequencies and von Mises stress. (Abstract).","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129869554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensing Applications Based on Cavity Perturbation Method - A Proof of Concept 基于空腔微扰方法的传感应用-概念验证
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539776
V. Buiculescu, R. Rebigan
{"title":"Sensing Applications Based on Cavity Perturbation Method - A Proof of Concept","authors":"V. Buiculescu, R. Rebigan","doi":"10.1109/SMICND.2018.8539776","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539776","url":null,"abstract":"A new category of sensing devices based on perturbation of a resonant circuit or cavity is presented in this paper. The sensor uses a substrate integrated waveguide (SIW) resonator perturbed by the column length of a liquid-in-glass thermometer. Total 1.05°MHz/°C sensitivity is measured with contributions of 0.6 MHz/°C from a liquid-in-glass thermometer with 0.2 mm diameter of the ethanol column and 0.45 MHz/°C from the SIW resonator. Simulations based on liquid columns with diameters of 0.5 mm and 1 mm show that sensitivities at least one order of magnitude higher than values currently available from state-of-the-art SAW sensors can be achieved. A solar energy harvesting solution is also analyzed for increasing the reading distance in fully wireless sensing applications.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126692718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Millimeter Wave and Terahertz Investigations on Some Dielectric Materials 某些介电材料的毫米波和太赫兹研究
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539814
M. Banciu, D. C. Geambasu, L. Nedelcu, A. Iuga, C. Chirila, L. Hrib, L. Trupina, T. Furuya, M. Tani, D. Pantelica, M. Dracea, P. Ionescu
{"title":"Millimeter Wave and Terahertz Investigations on Some Dielectric Materials","authors":"M. Banciu, D. C. Geambasu, L. Nedelcu, A. Iuga, C. Chirila, L. Hrib, L. Trupina, T. Furuya, M. Tani, D. Pantelica, M. Dracea, P. Ionescu","doi":"10.1109/SMICND.2018.8539814","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539814","url":null,"abstract":"Investigations of barium strontium titanate (BST) layers deposited on MgO and Si substrates are presented. Since the Sr content determines the dielectric and optical properties of the BST layers at room temperature, accurate compositional analysis was performed by using Rutherford Backscattering technique at 3.041 Mev.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132029896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-Dimensional-Structure Devices for Future ElectronicsBehaviors 未来电子行为的低维结构器件
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539751
S. Oda, T. Kawanago, H. Wakabayashi
{"title":"Low-Dimensional-Structure Devices for Future ElectronicsBehaviors","authors":"S. Oda, T. Kawanago, H. Wakabayashi","doi":"10.1109/SMICND.2018.8539751","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539751","url":null,"abstract":"Recent progress of nanotechnology has made possible observations of unique characteristic of nano-structure which are not possible in bulk semiconductors. In this talk, novel properties and possible device applications of quantum dots (OD), nanowires (1D) and atomic layer (2D) devices are discussed.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131517221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated Circuits 1 Student Papers 集成电路1学生论文
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539829
{"title":"Integrated Circuits 1 Student Papers","authors":"","doi":"10.1109/smicnd.2018.8539829","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539829","url":null,"abstract":"Integrated Circuits 1 Student papers","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130801164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Photocurrent in GeSi NCs / TiO2Multilayers GeSi NCs / tio2多层膜的增强光电流
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539740
C. Palade, A. Slav, O. Cojocaru, V. Teodorescu, S. Lazanu, T. Stoica, M. T. Sultan, H. Svavarsson, M. Ciurea
{"title":"Enhanced Photocurrent in GeSi NCs / TiO2Multilayers","authors":"C. Palade, A. Slav, O. Cojocaru, V. Teodorescu, S. Lazanu, T. Stoica, M. T. Sultan, H. Svavarsson, M. Ciurea","doi":"10.1109/SMICND.2018.8539740","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539740","url":null,"abstract":"GeSi NCs / Ti02 multilayers with enhanced photocurrent properties were prepared and studied. Multilayers of Ti02 /(GeSi/Ti02)x2 /Si-p were deposited by magnetron sputtering and annealed by RTA at 700 °C for GeSi NCs formation. A post-annealing hydrogenation in plasma was performed on multilayers for healing of defects acting as traps and/or recombination centers and consequently producing the photocurrent enhancement. We studied the electrical and photoconductive properties of multilayers annealed by RTA and post-annealing hydrogenated. The current - temperature dependence reveals the conduction mechanisms in GeSi NCs / Ti02 multilayers RTA annealed, i.e. thermal activation of carriers to extended states (0.31 eV activation energy), the electron tunneling mechanism to nearest neighbors (T-1/2 behavior) and Mott variable range hopping (T−1/4 dependence). The photocurrent spectra made on multilayers structures hydrogenated for 10, 20 and 30 min evidence the photocurrent increasing up to 50%, showing that the hydrogenation is a suitable treatment for enhancing photocurrent. All photocurrent spectra present a dominant maximum (920 nm) and two shoulders (~770 and~ 10 60 nm).","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123504552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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