Numerical Simulations of Radiation Damage Effects in Active-Edge Silicon Pixel Sensors for High-Energy Physics Experiments

Abstract

High-energy physics experiments at the future CERN High Luminosity LHC (Large Hadron Collider) require highly segmented pixelated sensors of increased geometrical efficiency and the ability of withstanding extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at very high fluences (2×1016neq/cm2), using a recent three level trap model for p-type silicon material. Precise structural definition is achieved by investigating the doping profile of the devices via the Secondary Ion Mass Spectrometry technique. The breakdown voltage, and hole density distribution are studied as a function of radiation fluences.