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2018 International Semiconductor Conference (CAS)最新文献

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Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices 用于可调谐和可重构器件的MoS2单层金属-绝缘体过渡
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539834
M. Aldrigo, M. Dragoman, D. Masotti
{"title":"Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices","authors":"M. Aldrigo, M. Dragoman, D. Masotti","doi":"10.1109/SMICND.2018.8539834","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539834","url":null,"abstract":"In this paper, we show the electromagnetic design of a small patch antenna based on a molybdenum disulphide (MoS2) monolayer, with an area of only 22mm2, that exhibits high radiation efficiency and large tunability in microwaves at 10GHz thanks to a metal-insulator transition (MIT) induced by electrostatic gating. Furthermore, the MIT in MoS2is used to reconfigure a tunable carbon nanotube-based filter, conferring it different functionalities: low-pass, high-pass and bandpass around 2GHz, while its carbon nanotube varactors allow tuning the cutoff frequency or central frequency.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129379723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Kinetics of Lanthanum and Yttrium Doped Zirconia Crystallization by X-ray Powder Diffraction x射线粉末衍射法研究镧钇掺杂氧化锆结晶动力学
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539827
D. V. Dragut, V. Badilita, R.R. Piticesccu, A. Moţoc
{"title":"Kinetics of Lanthanum and Yttrium Doped Zirconia Crystallization by X-ray Powder Diffraction","authors":"D. V. Dragut, V. Badilita, R.R. Piticesccu, A. Moţoc","doi":"10.1109/SMICND.2018.8539827","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539827","url":null,"abstract":"The need to develop high performance materials is increasing nowadays. Due to its extraordinary range of properties, the yttria-doped zirconia is placed in a special place among the ceramic oxide systems. Co-doping with other rare earths oxides, such as Lantania is required in order to obtain better properties for some applications. The aim of the following paper is to determine the kinetic growth parameters of the crystallite according to the nature and the content of dopant used. The ZrO2 - 3Y203 - nLa203 (n = 3, 6, 9) samples were obtained through a hydrothermal process.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129450446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Study of Sm and La Doped ZnO Properties Sm和La掺杂ZnO性能的比较研究
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539807
I. V. Tudose, P. Pascariu, C. Pachiu, F. Comanescu, M. Danila, R. Gavrila, E. Koudoumas, Mirela Petruta Suchea
{"title":"Comparative Study of Sm and La Doped ZnO Properties","authors":"I. V. Tudose, P. Pascariu, C. Pachiu, F. Comanescu, M. Danila, R. Gavrila, E. Koudoumas, Mirela Petruta Suchea","doi":"10.1109/SMICND.2018.8539807","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539807","url":null,"abstract":"Samarium and Lanthanum doped nanostructured ZnO thin films were grown onto glass substrates by spray deposition method. Influences of different concentrations (0% to 1%) of Sm and La on the ZnO structural and optical properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and by UV-VIS spectroscopy. X-ray diffraction studies revealed that the ZnO films have zincite crystalline structure and show a preferential growth orientation along (101) crystallographic orientation. Doping with Sm and La leads to changes of thin films crystallinity as well as their transparency in VIS region of electromagnetic spectrum. Increasing dopant concentration leads to slightly increased transparency.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127830038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resistor Based Temperature Sensor Using Active Inductor Oscillator 基于电阻的有源电感振荡器温度传感器
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539815
Savinescu Viorel-Stefan, Nica Ioan-Alexandru, L. Goras
{"title":"Resistor Based Temperature Sensor Using Active Inductor Oscillator","authors":"Savinescu Viorel-Stefan, Nica Ioan-Alexandru, L. Goras","doi":"10.1109/smicnd.2018.8539815","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539815","url":null,"abstract":"In this communication we present a temperature sensor based on the conversion of an on chip resistor variation with temperature into the period of a harmonic oscillator built with an active inductor resonator. The nonlinearity behavior of active inductor resonator is suppressed using an automatic amplitude control (AAC) loop which in turn makes the period of oscillation linear. An inaccuracy of ±0.34°C/±0.1°C after a first/second order polynomial fitting at a conversion speed of 30µs. The resolution for this time of conversion is 0.25°C. This innovative principle can be applied to any harmonic oscillator based on gyrator active inductor resonator.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131145630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated Circuits 2 集成电路2
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539749
{"title":"Integrated Circuits 2","authors":"","doi":"10.1109/smicnd.2018.8539749","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539749","url":null,"abstract":"Integrated Circuits 2","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129973808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application Specific Integrated Circuit (ASIC) for an Energy Efficient Impulse Radio Ultra-Wideband Transceiver. Testing and Statistic Assessment 一种节能脉冲无线电超宽带收发器专用集成电路(ASIC)。检验与统计评估
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539786
N. Varachiu, B. Benamrouche, J. Noullet, A. Rumeau, D. Dragomirescu
{"title":"Application Specific Integrated Circuit (ASIC) for an Energy Efficient Impulse Radio Ultra-Wideband Transceiver. Testing and Statistic Assessment","authors":"N. Varachiu, B. Benamrouche, J. Noullet, A. Rumeau, D. Dragomirescu","doi":"10.1109/SMICND.2018.8539786","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539786","url":null,"abstract":"This paper presents the set-up, test results and statistic evaluation for a lot of five ASIC prototypes of an impulse radio ultra-wideband transceiver (IR-UWB), realized in ST Microelectronics CMOS 65 nm technology. The main purpose of our undertaken is to provide an energy efficient device: having five functional prototypes we assessed the manufacturing process stability in respect with average power consumption, at different data rates.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123653297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Improved Ti/Pt/Au - n-Type Si Contacts by Post-Metallization Annealing in Nitrogen Atmosphere 氮气氛下后金属化退火改进Ti/Pt/Au - n型Si触点
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539839
R. Pascu, M. Danila, P. Varasteanu, M. Kusko, G. Pristavu, G. Brezeanu, F. Draghici
{"title":"Improved Ti/Pt/Au - n-Type Si Contacts by Post-Metallization Annealing in Nitrogen Atmosphere","authors":"R. Pascu, M. Danila, P. Varasteanu, M. Kusko, G. Pristavu, G. Brezeanu, F. Draghici","doi":"10.1109/SMICND.2018.8539839","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539839","url":null,"abstract":"A metallic sandwich (Ti/Pt/Au) is deposited on n-type Si and subsequently subjected to post-metallization annealing at temperatures ranging from 500°C to 950°C, with a step of 50°C. XRD microstructural investigations evince the effect of post-metallization annealing, focusing on the formation of the silicide interface layer at each of the annealing temperatures. The electrical quality of the contacts was analyzed based on the linear transfer length method using test structures with different gaps between the pads. Accordingly, the sheet resistance, the contact resistance, the transfer length and the specific contact resistivity are determined. It is demonstrated that sheet resistance improves with more than three orders of magnitude at 900°C, compared the reference sample. The contact resistance also improves with more than one order of magnitude, reaching a minimum value of 1.68Ω at 950°C. The transfer length reaches a maximum value of 10.8 μm at 750°C, corresponding to a specific contact resistivity of 4.82.10-5Ω· cm2. Finally, an effective resistivity for the fabricated ohmic contact of 0.033 Ωcm is obtained for PMA at 950°C.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121262098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Properties of As-Deposited ALD HfO2 Films Related to Silicon Surface State 沉积ALD HfO2薄膜电学性能与硅表面态的关系
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539782
C. Cobianu, F. Năstase, N. Dumbravescu, O. Buiu, A. Albu, Bogdan Serbanl, M. Danila, C. Romanițan, O. Ionescu
{"title":"Electrical Properties of As-Deposited ALD HfO2 Films Related to Silicon Surface State","authors":"C. Cobianu, F. Năstase, N. Dumbravescu, O. Buiu, A. Albu, Bogdan Serbanl, M. Danila, C. Romanițan, O. Ionescu","doi":"10.1109/SMICND.2018.8539782","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539782","url":null,"abstract":"In this paper, we present an experimental study of the electrical properties of the as-deposited HfO2films obtained by atomic layer deposition (ALD) method from tetrakis dimethylamino hafnium and water vapors at 200°C as a function of the silicon substrate preparation, in terms of Si-H and Si-OH terminated surfaces. High frequency C- V characteristics have proven that relatively higher effective dielectric constant, lower fixed charge at the Si-HfO2 interface and lower oxide trapped charge were obtained on MOS capacitors with HfO2 dielectric performed on Si-OH terminated Si surface with respect Si-H terminated surface, proving a more robust Si-O-Hf interface with respect to Si-Hf-O interface.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115513461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature Measurements with Four-Resistor Sensor Patterned on Golden Layer 温度测量四电阻传感器图案上的金层
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539828
M. Sarajlić, M. Frantlović, P. Poljak, K. Radulović, D. V. Radović
{"title":"Temperature Measurements with Four-Resistor Sensor Patterned on Golden Layer","authors":"M. Sarajlić, M. Frantlović, P. Poljak, K. Radulović, D. V. Radović","doi":"10.1109/SMICND.2018.8539828","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539828","url":null,"abstract":"Test of a sensor with four resistors structure on its sensitivity as a temperature probe is described. The chip is sensitive on a temperature difference between Si substrate and air and less sensitive on the temperature of the whole chip. The sensor consists out of four resistors realized as metal meanders on a silicon chip patterned in 150 nm thick gold layer whose lateral dimensions are 0.94 mm by 0.6 mm and the length 14.1 mm. Width of meander line is 0.02 mm with clearance 0.02 mm. The resistors form Wheatstone bridge configuration. Current through resistors was kept constant on 5 mA. Offset of the bridge on no temperature difference was 1.5 mV. In the case of temperature difference on the sensor surface, sensor output is changing with linear dependence. This has a potential for the use in temperature stabilization systems.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124364257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three Phase Synchronous Boost Rectifier 三相同步升压整流器
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539792
V. Trifa, G. Brezeanu, E. Ceuca
{"title":"Three Phase Synchronous Boost Rectifier","authors":"V. Trifa, G. Brezeanu, E. Ceuca","doi":"10.1109/SMICND.2018.8539792","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539792","url":null,"abstract":"In this paper we will analyze two systems, one synchronous and one nonsynchronous, for drive and recover energy from a three-phase motor (a three phase motor can be used as an electric generator according to the mechanical power applied to its shaft) and we will propose a more efficient circuit to drive a three-phase motor and recover energy from the motor. The paper is a survey and represent the preliminary work in achieving the knowledge for developing a practical solution for to make the system more efficient.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126069332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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