{"title":"Comparison of different LED Packages","authors":"H. Dieker, C. Miesner, D. Püttjer, B. Bachl","doi":"10.1117/12.758944","DOIUrl":"https://doi.org/10.1117/12.758944","url":null,"abstract":"In this paper different technologies for LED packaging are compared, focusing on Chip on Board (COB) and SMD technology. The package technology which is used depends on the LED application. A critical fact in LED technology is the thermal management, especially for high brightness LED applications because the thermal management is important for reliability, lifetime and electrooptical performance of the LED module. To design certain and long life LED applications knowledge of the heat flow from LEDs to the complete application is required. High sophisticated FEM simulations are indispensable for modern development of high power LED applications. We compare simulations of various substrate materials and packaging technologies simulated using FLOTHERM software. Thereby different substrates such as standard FR4, ceramic and metal core printed circuit boards are considered. For the verification of the simulated results and the testing of manufactured modules, advanced measurement tools are required. We show different ways to experimentally characterize the thermal behavior of LED modules. The thermal path is determined by the transient thermal analysis using the MicReD T3Ster analyzer. Afterwards it will be compared to the conventional method using thermocouples. The heat distribution over the module is investigated by an IR-Camera. We demonstrate and compare simulation and measurement results of Chip-on-Board (COB) and Sub-Mounted Devices (SMD) technology. The results reveal that for different applications certain packages are ideal.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"345 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134234487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dandan Zhu, B. Corbett, B. Roycroft, P. Maaskant, C. McAleese, M. Akhter, M. Kappers, C. Humphreys
{"title":"Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications","authors":"Dandan Zhu, B. Corbett, B. Roycroft, P. Maaskant, C. McAleese, M. Akhter, M. Kappers, C. Humphreys","doi":"10.1117/12.758799","DOIUrl":"https://doi.org/10.1117/12.758799","url":null,"abstract":"The performance of a series of near-UV (~385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the light-emitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50 micrometers in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133607441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A silicon wafer packaging solution for HB-LEDs","authors":"Tom Murphy, S. Weichel, S. Isaacs, J. Kuhmann","doi":"10.1117/12.753085","DOIUrl":"https://doi.org/10.1117/12.753085","url":null,"abstract":"In this paper we present HyLED, a silicon wafer packaging solution for high-brightness LEDs. The associated technology is batch micro-machining/metallisation processing of silicon wafers allowing significant reduction of the final device size. The presented package is multi-functional where the micro-machined cavity acts as reflector, thermal conductor and reservoir for the silicone/colour conversion substance. The base material, silicon, has excellent mechanical and thermal properties and enables direct integration of intelligence. We present customer specific solutions, open tool samples and performance data for optical and thermal parameters and reliability testing. Thermal resistance values of R<5 K/W, junction-to-board are demonstrated.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134027377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Levy, Y. Désières, P. Ferret, S. Fichet, S. Gidon, P. Gilet, P. Noel, I. Robin, E. Romain-Latu, M. Rosina, R. Songmuang, G. Feuillet, B. Daudin, A. Chelnokov
{"title":"Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization","authors":"F. Levy, Y. Désières, P. Ferret, S. Fichet, S. Gidon, P. Gilet, P. Noel, I. Robin, E. Romain-Latu, M. Rosina, R. Songmuang, G. Feuillet, B. Daudin, A. Chelnokov","doi":"10.1117/12.768615","DOIUrl":"https://doi.org/10.1117/12.768615","url":null,"abstract":"LEDs based on semiconductor nanowires are a promising alternative to the standard planar devices to achieve low cost high yield manufacturing for the general lighting applications. The expected advantages of such structures are a high crystalline quality of the heterostructures, compliance with a large range of substrates and light extraction enhancement. We report here on the present status of our research work concerning the electromagnetic simulation of nanowire emission, the epitaxy of near-UV semiconductor vertically aligned nanowires, the collective integration technology of these nanowires and their characterizations.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131936345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"LED-driven backlights for automotive displays","authors":"F. Strauch","doi":"10.1117/12.776891","DOIUrl":"https://doi.org/10.1117/12.776891","url":null,"abstract":"As a light source the LED has some advantage over the traditionally used fluorescence tube such as longer life or lower space consumption. Consequently customers are asking for the LED lighting design in their products. We introduced in a company owned backlight the white LED technology. This step opens the possibility to have access to the components in the display market. Instead of having a finalized display product which needs to be integrated in the head unit of a car we assemble the backlight, the glass, own electronics and the housing. A major advantage of this concept is the better control of the heat flow generated by the LEDs to the outer side because only a common housing is used for all the components. Also the requirement for slim products can be fulfilled. As always a new technology doesn't come with advantages only. An LED represents a point source compared to the well-known tube thus requiring a mixing zone for the multiple point sources when they enter a light guide. This zone can't be used in displays because of the lack of homogeneity. It's a design goal to minimize this zone which can be helped by the right choice of the LED in terms of slimness. A step ahead is the implementation of RGB LEDs because of their higher color rendering abilities. This allows for the control of the chromaticity point under temperature change but as a drawback needs a larger mixing zone.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128665016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Wan Choi, Jeung-Mo Kang, Jae-Wook Kim, Jeong-Hyeon Choi, Du-Hyun Kim, Geun-ho Kim, Yong-Seon Song, Y. Won, Jeong‐Soo Lee
{"title":"Thermal analysis of wafer-level LED packages with multichips","authors":"Jae-Wan Choi, Jeung-Mo Kang, Jae-Wook Kim, Jeong-Hyeon Choi, Du-Hyun Kim, Geun-ho Kim, Yong-Seon Song, Y. Won, Jeong‐Soo Lee","doi":"10.1117/12.758825","DOIUrl":"https://doi.org/10.1117/12.758825","url":null,"abstract":"Thermal analysis of wafer-level packaged LEDs with red, green and blue multi-chips are investigated. With Si-MEMS technology, wafer-level packaged LEDs are useful for the high power applications such as back light unit (BLU) and general solid state lighting due to the compactness and integrated fabrication process. In this paper, thermal characteristics of wafer-level packaged white LEDs with multi-chips are investigated using both serial and matrix measurement methods.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130848227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Issues and solutions: opportunities for European LED manufacturers","authors":"T. Pearsall","doi":"10.1117/12.764903","DOIUrl":"https://doi.org/10.1117/12.764903","url":null,"abstract":"Marketing studies by EPIC show significant revenue opportunities by 2012 for UHB-LEDs in the automotive, LCD backlighting, and architectural lighting sectors. The goal of this workshop on manufacturing issues is to consider five key issues for UHB-LED manufacturing and to propose solutions that will pave the way to full exploitation of the opportunities.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121565161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Markets and technology needs for UHB-LEDs","authors":"P. Roussel","doi":"10.1117/12.760009","DOIUrl":"https://doi.org/10.1117/12.760009","url":null,"abstract":"With an annual volume of more than 5 million units of 2\" equivalent substrates, GaN-based LED is the main eater of nitride materials targeting a $3.5B market at devices level. The next big challenge for LED business is to take market shares over the general lighting industry and dollar per lumen ($/lm) ratio is the key parameter. Numerous technological improvements are under investigation: - At die level, photonic crystals and surface texturing technologies are jointly developed to increase the light extraction. External Quantum Efficiency EQE has now reached > 75% at R&D level. - At material level, there is a rapid emergence of new substrates for GaN epitaxy and composite substrates in 6\" diameter. That is opening new doors to higher LED luminous efficiency and cost reduction toward the gigantic SSL general illumination business.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117033811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. S. Lee, Z. C. Feng, H. Tsai, J. Yang, A. G. Li, L. C. Chen, K. H. Chen, Y. F. Chen, Ian T. Ferguson, W. Lu
{"title":"Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: effects of nano-structural features","authors":"Z. S. Lee, Z. C. Feng, H. Tsai, J. Yang, A. G. Li, L. C. Chen, K. H. Chen, Y. F. Chen, Ian T. Ferguson, W. Lu","doi":"10.1117/12.758980","DOIUrl":"https://doi.org/10.1117/12.758980","url":null,"abstract":"Optical and structural properties of InGaN/GaN multi-quantum well (MQW) structures with different well width, influenced by the nano-structural features in the MQWs, were investigated by optical measurements of photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL), as well as structural analysis methods, such as high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM) measurements. Due to the quantum confined Stark effect (QCSE), larger Stokes shift is induced with larger well width. Thermally activated carrier screening model is established to well describe the so-called S-shaped spectral shift with temperature. Inhomogeneous line-width broadening induced by piezoelectric field is found to be dominant at low temperature, while homogeneous line-width broadening due to phonon scattering takes over at higher temperature. Additionally, two activation energies are extracted from the Arrhenius plot of PL intensity. One is assigned to be the exciton binding energy and the other one the confinement energy of electrons in the quantum well. TRPL study further indicated that the radiative lifetime was decreased with the decreased well width. All these are associated with the In-composition fluctuation and nano-structures in the MQWs.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128058909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
U. Zehnder, B. Hahn, J. Baur, M. Peter, S. Bader, H. Lugauer, A. Weimar
{"title":"GaInN LEDs: straight way for solid state lighting","authors":"U. Zehnder, B. Hahn, J. Baur, M. Peter, S. Bader, H. Lugauer, A. Weimar","doi":"10.1117/12.759472","DOIUrl":"https://doi.org/10.1117/12.759472","url":null,"abstract":"With the new Generation of InGaN-based thinfilm Chips efficacies of 110/lm/W and output power of 32 mW at 20 mA (5 mm Radial lamp, 438nm, chip-size 255&mgr;m x 460&mgr;m) are reached. Due to the scalability of the ThinGaN concept chip brightness and efficiency are scalable to larger chip sizes: the brightness achieved for a 1 mm2 ThinGaN Power chip at 350 mA were 495mW (445nm) and 202mW or 100 lm (527nm). White LEDs with phosphorus achieved 102 lm at 350mA, mounted in an OSTAR module with six LED chips 1200 lm were demonstrated at 1000 mA driving current. White emitting automotive headlamp modules with 620lm (5x 1mm2 chip at 700mA) and 41 MCd/m2 as well as green emitting projection modules with 57 MCd/m2 at 2A/mm2 drive current and 12mm2 chip area are realized. These technological improvements demonstrate the straight way of GaInN-LEDs for Solid State lighting.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115598322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}