Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization

LEDs based on semiconductor nanowires are a promising alternative to the standard planar devices to achieve low cost high yield manufacturing for the general lighting applications. The expected advantages of such structures are a high crystalline quality of the heterostructures, compliance with a large range of substrates and light extraction enhancement. We report here on the present status of our research work concerning the electromagnetic simulation of nanowire emission, the epitaxy of near-UV semiconductor vertically aligned nanowires, the collective integration technology of these nanowires and their characterizations.