{"title":"Markets and technology needs for UHB-LEDs","authors":"P. Roussel","doi":"10.1117/12.760009","DOIUrl":null,"url":null,"abstract":"With an annual volume of more than 5 million units of 2\" equivalent substrates, GaN-based LED is the main eater of nitride materials targeting a $3.5B market at devices level. The next big challenge for LED business is to take market shares over the general lighting industry and dollar per lumen ($/lm) ratio is the key parameter. Numerous technological improvements are under investigation: - At die level, photonic crystals and surface texturing technologies are jointly developed to increase the light extraction. External Quantum Efficiency EQE has now reached > 75% at R&D level. - At material level, there is a rapid emergence of new substrates for GaN epitaxy and composite substrates in 6\" diameter. That is opening new doors to higher LED luminous efficiency and cost reduction toward the gigantic SSL general illumination business.","PeriodicalId":245823,"journal":{"name":"Manufacturing LEDs for Lighting and Display","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Manufacturing LEDs for Lighting and Display","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.760009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
With an annual volume of more than 5 million units of 2" equivalent substrates, GaN-based LED is the main eater of nitride materials targeting a $3.5B market at devices level. The next big challenge for LED business is to take market shares over the general lighting industry and dollar per lumen ($/lm) ratio is the key parameter. Numerous technological improvements are under investigation: - At die level, photonic crystals and surface texturing technologies are jointly developed to increase the light extraction. External Quantum Efficiency EQE has now reached > 75% at R&D level. - At material level, there is a rapid emergence of new substrates for GaN epitaxy and composite substrates in 6" diameter. That is opening new doors to higher LED luminous efficiency and cost reduction toward the gigantic SSL general illumination business.