Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications

Dandan Zhu, B. Corbett, B. Roycroft, P. Maaskant, C. McAleese, M. Akhter, M. Kappers, C. Humphreys
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Abstract

The performance of a series of near-UV (~385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the light-emitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50 micrometers in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.
提高近紫外发光led在固态照明应用中的效率
研究了由高效InGaN/AlInGaN量子阱组成的近紫外(~385 nm)发光led的性能。与在相似波长下发光的InGaN/GaN led相比,发现在高电流密度下效率的翻转显着降低。光腔效应在倒装几何器件中的重要性也被研究。当发光区域位于相对于高反射率电流注入镜的反节点位置时,光输出增强了2倍以上。在结区直径为50微米,电流为30 mA的情况下,在0.5的数值孔径中获得了0.49 mW的功率,对应于30 W/cm2/str的辐射。
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