2015 IEEE 12th International Conference on Group IV Photonics (GFP)最新文献

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Fully integrated SOI wavelength meter based on phase shift technique 基于相移技术的全集成SOI波长计
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305985
A. Ruocco, W. Bogaerts
{"title":"Fully integrated SOI wavelength meter based on phase shift technique","authors":"A. Ruocco, W. Bogaerts","doi":"10.1109/GROUP4.2015.7305985","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305985","url":null,"abstract":"We present an MZI (Mach-Zehnder Interferometer) silicon-on-insulator (SOI) wavelength meter. The device integrates photo detectors and modulators. The phase shift between carrier and modulated signal is linearly correlated to the input wavelength.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116008174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Design rules to control the tensile strain in Ge μ-membranes fabricated from GeOI substrates for photonics applications 光电用gei基板制备的Ge μ膜的拉伸应变控制规则
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305988
G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, J. Escalante, I. Duchemin, Y. Niquet, F. Rieutord, V. Calvo, J. Faist, R. Geiger, T. Zabel, H. Sigg
{"title":"Design rules to control the tensile strain in Ge μ-membranes fabricated from GeOI substrates for photonics applications","authors":"G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, J. Escalante, I. Duchemin, Y. Niquet, F. Rieutord, V. Calvo, J. Faist, R. Geiger, T. Zabel, H. Sigg","doi":"10.1109/GROUP4.2015.7305988","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305988","url":null,"abstract":"Applying the right tensile strain to suspended membranes [1] can make Germanium a direct band-gap semiconductor, which is most promising way to low-threshold lasing [2]. The current key to reach the targeted high tensile strain is the quality of the Germanium. Epitaxied Germanium (Ge) on Silicon (Si) suffers from dislocations at its interface due to the lattice mismatch between Si and Ge (Figure 1 a). Higher crystalline quality can be obtained by fabricating Germanium on Insulator (GeOI) substrates by Smart Cut™ technology [3]. However, the processing has to be adapted to obtain specific “optical” GeOI substrates [4], much thicker than standard microelectronics GeOI.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132569189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intraband crosstalk of SOI microring resonator-based optical add-drop multiplexers 基于SOI微环谐振器的光加降多路复用器带内串扰
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305925
H. Jayatilleka, K. Murray, M. Caverley, N. Jaeger, S. Shekhar, L. Chrostowski
{"title":"Intraband crosstalk of SOI microring resonator-based optical add-drop multiplexers","authors":"H. Jayatilleka, K. Murray, M. Caverley, N. Jaeger, S. Shekhar, L. Chrostowski","doi":"10.1109/GROUP4.2015.7305925","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305925","url":null,"abstract":"We compare intraband crosstalk of first-order, cascaded, and series-coupled microring optical add-drop multiplexers. We show that first-order microring devices are unsuitable for simultaneous add-drop operation and we present filter requirements for cascaded and series-coupled devices.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126738688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Arbitrary self-configuring optics with silicon photonics 任意自配置光学与硅光子学
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305924
D. Miller
{"title":"Arbitrary self-configuring optics with silicon photonics","authors":"D. Miller","doi":"10.1109/GROUP4.2015.7305924","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305924","url":null,"abstract":"New mesh architectures of Mach-Zehnder interferometers with integrated detectors and simple feedback loops allow complex adaptive optical circuits for applications including mode conversion, arbitrary I incur processors, and quantum circuits - all self-designed and stabilized by training.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114609671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On chip test structure for fabrication error estimation based on a sequence of coupled resonators 基于耦合谐振器序列的制造误差估计的片上测试结构
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305990
M. Borghi, M. Mancinelli, J. Fédéli, Lorenzo Pavesi
{"title":"On chip test structure for fabrication error estimation based on a sequence of coupled resonators","authors":"M. Borghi, M. Mancinelli, J. Fédéli, Lorenzo Pavesi","doi":"10.1109/GROUP4.2015.7305990","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305990","url":null,"abstract":"We report on the realization of an on chip test structure which quantifies the degree of fabrication error of a photolithographic process. The device is based on a sequence of coupled resonators and allows performing a direct on chip test measurement.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122064536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of photonic 2×2 3-dB couplers for 220 nm silicon-on-insulator platforms 用于220 nm绝缘体上硅平台的光子2×2 3db耦合器的比较
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305944
Zeqin Lu, D. Celo, P. Dumais, E. Bernier, L. Chrostowski
{"title":"Comparison of photonic 2×2 3-dB couplers for 220 nm silicon-on-insulator platforms","authors":"Zeqin Lu, D. Celo, P. Dumais, E. Bernier, L. Chrostowski","doi":"10.1109/GROUP4.2015.7305944","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305944","url":null,"abstract":"We present an experimental performance comparison of various types of 3-dB coupler fabricated on SOI platforms. Each type has its own advantages and disadvantages, suggesting that the choice of coupler is driven by the application.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125721073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Enhanced coupling with metal-assisted gratings for photonic circuits on 0.18-um bulk CMOS platform 金属辅助光栅在0.18 μ m CMOS平台光子电路中的增强耦合
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305987
Li-Chi Yang, San-Liang Lee, Y. Hung
{"title":"Enhanced coupling with metal-assisted gratings for photonic circuits on 0.18-um bulk CMOS platform","authors":"Li-Chi Yang, San-Liang Lee, Y. Hung","doi":"10.1109/GROUP4.2015.7305987","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305987","url":null,"abstract":"The input/output coupling efficiency of a grating coupler is enhanced by utilizing the existing metal layers in standard bulk CMOS platform as mirrors. Experimental results demonstrate 5.5-dB improvement on fiber-to-fiber coupling that matches simulated results.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128439793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phase-change materials for Group-IV electro-optical switching and modulation 第四族电光开关和调制用相变材料
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7353053
R. Soref
{"title":"Phase-change materials for Group-IV electro-optical switching and modulation","authors":"R. Soref","doi":"10.1109/GROUP4.2015.7353053","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7353053","url":null,"abstract":"This paper reviews the invention, design and theoretical simulation of 2 x 2 and 1 x 4 optical routing switches. Insertion loss and crosstalk performance in the 1.55 to 3.0 μm wavelength range are predicted. The electrically actuated optical layer is a thin film of Ge2Sb2Te5 or GeTe or GeSe whose thickness is in the 10 to 100-nm range. This film was embedded at the centerline of an SOI, SON, or GeOI channel waveguide structure for MZI and directional-coupler switching Alternatively, to switch free-space light beams, Ge prisms sandwiching the film were employed. Devices are self-sustaining in each of their two states. Experiments are needed to confirm assumptions made in the theory about voltage requirements, speed, PCM index, and manufacturing techniques.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128043847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A low-power biasing scheme for silicon-on-insulator traveling-wave modulators 绝缘体上硅行波调制器的低功率偏置方案
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305992
M. Caverley, Han Yun, L. Chrostowski, N. Jaeger
{"title":"A low-power biasing scheme for silicon-on-insulator traveling-wave modulators","authors":"M. Caverley, Han Yun, L. Chrostowski, N. Jaeger","doi":"10.1109/GROUP4.2015.7305992","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305992","url":null,"abstract":"We propose a biasing scheme for silicon-on-insulator traveling-wave Mach-Zehnder modulators which eliminates the termination-related DC power consumption due to biasing and we present measurements on a high-speed modulator that uses this scheme.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131866289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-voltage and low-loss silicon modulator based on carrier accumulation using a vertical slot waveguide 基于载波积累的低电压低损耗硅调制器
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305968
A. Abraham, O. Dubray, S. Olivier, D. Marrls-Morini, S. Menezo, L. Vivien
{"title":"Low-voltage and low-loss silicon modulator based on carrier accumulation using a vertical slot waveguide","authors":"A. Abraham, O. Dubray, S. Olivier, D. Marrls-Morini, S. Menezo, L. Vivien","doi":"10.1109/GROUP4.2015.7305968","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305968","url":null,"abstract":"We optimized a silicon ring resonator modulator embedding a low-voltage and low-loss vertical Capacitive phase shifter. It exhibits an extinction ratio of 10 dB at 2 Vpp, with only 1.8 dB insertion losses.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113987630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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