{"title":"Fully integrated SOI wavelength meter based on phase shift technique","authors":"A. Ruocco, W. Bogaerts","doi":"10.1109/GROUP4.2015.7305985","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305985","url":null,"abstract":"We present an MZI (Mach-Zehnder Interferometer) silicon-on-insulator (SOI) wavelength meter. The device integrates photo detectors and modulators. The phase shift between carrier and modulated signal is linearly correlated to the input wavelength.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116008174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, J. Escalante, I. Duchemin, Y. Niquet, F. Rieutord, V. Calvo, J. Faist, R. Geiger, T. Zabel, H. Sigg
{"title":"Design rules to control the tensile strain in Ge μ-membranes fabricated from GeOI substrates for photonics applications","authors":"G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, J. Escalante, I. Duchemin, Y. Niquet, F. Rieutord, V. Calvo, J. Faist, R. Geiger, T. Zabel, H. Sigg","doi":"10.1109/GROUP4.2015.7305988","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305988","url":null,"abstract":"Applying the right tensile strain to suspended membranes [1] can make Germanium a direct band-gap semiconductor, which is most promising way to low-threshold lasing [2]. The current key to reach the targeted high tensile strain is the quality of the Germanium. Epitaxied Germanium (Ge) on Silicon (Si) suffers from dislocations at its interface due to the lattice mismatch between Si and Ge (Figure 1 a). Higher crystalline quality can be obtained by fabricating Germanium on Insulator (GeOI) substrates by Smart Cut™ technology [3]. However, the processing has to be adapted to obtain specific “optical” GeOI substrates [4], much thicker than standard microelectronics GeOI.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132569189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Jayatilleka, K. Murray, M. Caverley, N. Jaeger, S. Shekhar, L. Chrostowski
{"title":"Intraband crosstalk of SOI microring resonator-based optical add-drop multiplexers","authors":"H. Jayatilleka, K. Murray, M. Caverley, N. Jaeger, S. Shekhar, L. Chrostowski","doi":"10.1109/GROUP4.2015.7305925","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305925","url":null,"abstract":"We compare intraband crosstalk of first-order, cascaded, and series-coupled microring optical add-drop multiplexers. We show that first-order microring devices are unsuitable for simultaneous add-drop operation and we present filter requirements for cascaded and series-coupled devices.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126738688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Arbitrary self-configuring optics with silicon photonics","authors":"D. Miller","doi":"10.1109/GROUP4.2015.7305924","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305924","url":null,"abstract":"New mesh architectures of Mach-Zehnder interferometers with integrated detectors and simple feedback loops allow complex adaptive optical circuits for applications including mode conversion, arbitrary I incur processors, and quantum circuits - all self-designed and stabilized by training.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114609671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Borghi, M. Mancinelli, J. Fédéli, Lorenzo Pavesi
{"title":"On chip test structure for fabrication error estimation based on a sequence of coupled resonators","authors":"M. Borghi, M. Mancinelli, J. Fédéli, Lorenzo Pavesi","doi":"10.1109/GROUP4.2015.7305990","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305990","url":null,"abstract":"We report on the realization of an on chip test structure which quantifies the degree of fabrication error of a photolithographic process. The device is based on a sequence of coupled resonators and allows performing a direct on chip test measurement.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122064536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zeqin Lu, D. Celo, P. Dumais, E. Bernier, L. Chrostowski
{"title":"Comparison of photonic 2×2 3-dB couplers for 220 nm silicon-on-insulator platforms","authors":"Zeqin Lu, D. Celo, P. Dumais, E. Bernier, L. Chrostowski","doi":"10.1109/GROUP4.2015.7305944","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305944","url":null,"abstract":"We present an experimental performance comparison of various types of 3-dB coupler fabricated on SOI platforms. Each type has its own advantages and disadvantages, suggesting that the choice of coupler is driven by the application.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125721073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhanced coupling with metal-assisted gratings for photonic circuits on 0.18-um bulk CMOS platform","authors":"Li-Chi Yang, San-Liang Lee, Y. Hung","doi":"10.1109/GROUP4.2015.7305987","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305987","url":null,"abstract":"The input/output coupling efficiency of a grating coupler is enhanced by utilizing the existing metal layers in standard bulk CMOS platform as mirrors. Experimental results demonstrate 5.5-dB improvement on fiber-to-fiber coupling that matches simulated results.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128439793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Phase-change materials for Group-IV electro-optical switching and modulation","authors":"R. Soref","doi":"10.1109/GROUP4.2015.7353053","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7353053","url":null,"abstract":"This paper reviews the invention, design and theoretical simulation of 2 x 2 and 1 x 4 optical routing switches. Insertion loss and crosstalk performance in the 1.55 to 3.0 μm wavelength range are predicted. The electrically actuated optical layer is a thin film of Ge2Sb2Te5 or GeTe or GeSe whose thickness is in the 10 to 100-nm range. This film was embedded at the centerline of an SOI, SON, or GeOI channel waveguide structure for MZI and directional-coupler switching Alternatively, to switch free-space light beams, Ge prisms sandwiching the film were employed. Devices are self-sustaining in each of their two states. Experiments are needed to confirm assumptions made in the theory about voltage requirements, speed, PCM index, and manufacturing techniques.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128043847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A low-power biasing scheme for silicon-on-insulator traveling-wave modulators","authors":"M. Caverley, Han Yun, L. Chrostowski, N. Jaeger","doi":"10.1109/GROUP4.2015.7305992","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305992","url":null,"abstract":"We propose a biasing scheme for silicon-on-insulator traveling-wave Mach-Zehnder modulators which eliminates the termination-related DC power consumption due to biasing and we present measurements on a high-speed modulator that uses this scheme.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131866289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Abraham, O. Dubray, S. Olivier, D. Marrls-Morini, S. Menezo, L. Vivien
{"title":"Low-voltage and low-loss silicon modulator based on carrier accumulation using a vertical slot waveguide","authors":"A. Abraham, O. Dubray, S. Olivier, D. Marrls-Morini, S. Menezo, L. Vivien","doi":"10.1109/GROUP4.2015.7305968","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305968","url":null,"abstract":"We optimized a silicon ring resonator modulator embedding a low-voltage and low-loss vertical Capacitive phase shifter. It exhibits an extinction ratio of 10 dB at 2 Vpp, with only 1.8 dB insertion losses.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113987630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}