用于220 nm绝缘体上硅平台的光子2×2 3db耦合器的比较

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI:10.1109/GROUP4.2015.7305944

Zeqin Lu, D. Celo, P. Dumais, E. Bernier, L. Chrostowski

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引用次数: 11

摘要

本文介绍了在SOI平台上制作的各种类型的3db耦合器的实验性能比较。每种类型都有自己的优点和缺点，这表明耦合器的选择是由应用驱动的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of photonic 2×2 3-dB couplers for 220 nm silicon-on-insulator platforms

We present an experimental performance comparison of various types of 3-dB coupler fabricated on SOI platforms. Each type has its own advantages and disadvantages, suggesting that the choice of coupler is driven by the application.

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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