2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)最新文献

筛选
英文 中文
RF Double Balanced Current Mirror UP-Conversion Mixer at 2.4 GHz Frequency 2.4 GHz频率的射频双平衡电流镜上变频混频器
Shreyas Tiwari, R. Khatri, R. Gurjar
{"title":"RF Double Balanced Current Mirror UP-Conversion Mixer at 2.4 GHz Frequency","authors":"Shreyas Tiwari, R. Khatri, R. Gurjar","doi":"10.1109/IEMENTech48150.2019.8981073","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981073","url":null,"abstract":"A 2.4 GHz CMOS based highly linear; low power, low voltage with minimum noise figure current mirror UP conversion mixer in 0.18 micrometer technology is designed. The proposed UP conversion mixer is based on current mirror technology and class AB topology of the power amplifier. In addition to it by using previous current mirror technology and class AB topology in mixer image rejection of the mixer is improved, nonlinearity of the mixer decreases and further more power dissipation of mixer is also reduced. The implemented UP conversion mixer has conversion gain of 6.89 dB with third order intercept point (IIP3) −3.05 dBm and Noise Figure of the Mixer is 10.6 dB with supply voltage of 1.8 V and operating frequency is 2.4GHz.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133732180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physicochemical characterization of sodium bentonite clay and its significance as a catalyst in plastic wastes valorization 钠基膨润土的理化性质及其在塑料垃圾催化增值中的意义
Awinash Kumar, P. Lingfa
{"title":"Physicochemical characterization of sodium bentonite clay and its significance as a catalyst in plastic wastes valorization","authors":"Awinash Kumar, P. Lingfa","doi":"10.1109/IEMENTech48150.2019.8981195","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981195","url":null,"abstract":"This study reveals the physicochemical characterization and catalytic behavior of locally available sodium bentonite clay. The clay was treated with hydrochloric acid to identify the characteristics. This paper explains XRF, FT-IR, XRD, SEM, and TGA characterization of commercially available sodium bentonite clay, a potential catalyst for thermo- catalytic pyrolysis in waste plastic valorization. Phase identification, structural properties, and chemical compositions were investigated. Less value of a loss on ignition (LOI) was found as 9.8% by weight which shows better acceptance performance for thermo- catalytic process of plastic wastes recycling. SiO2 (52.55%), A12O3(15.34%), and Fe2O3 (11.92%) three major compounds were identified by XRF and satisfy the XRD pattern. Spectra show that at 1009.25 cm−1, 1032.05 cm−1and 1112.90 cm-1 band positions are strong bands of Si-O stretching of monosubstituted and tetrahedral compounds. Alcohols and phenols group of compounds have sharp band positions of H- O-H stretching at 3620.59 cm−1and 3695.17 cm−1. The maximum average crystallite size was found 26.55 nm for 25.09° (2Θ) absorption. The morphology indicates that the presences of large particles are in the form of agglomerates. The high weight percentage of SiO2 and CaCO3 were spotted respectively 45.40% and 42.18% by weight for raw clay in the scanning electron micrograph. After acid treatment, it was found that the % weight of CaCO3 was decreased as 20.99% and % weight of SiO2 was increased as 48.88%. Thermo gravimetric graph shows that the reliable temperature range is 450°C to 500°C, which satisfies the pyrolysis process temperature range. The objective of this paper is to explore the similar utilization of the montmorillonite group of clay as a catalyst and useful engineering aspects for recycling plastic wastes.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130353395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of Gate Dielectrics on Analog/RF Performance of Double Gate Tunnel Field Effect Transistor 栅极介质对双栅隧道场效应晶体管模拟/射频性能的影响
P. Singh, K. Baral, S. Chander, Sanjay Kumar, M. Tripathy, A. K. Singh, S. Jit
{"title":"Impact of Gate Dielectrics on Analog/RF Performance of Double Gate Tunnel Field Effect Transistor","authors":"P. Singh, K. Baral, S. Chander, Sanjay Kumar, M. Tripathy, A. K. Singh, S. Jit","doi":"10.1109/IEMENTech48150.2019.8981283","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981283","url":null,"abstract":"In this paper, analog/radio frequency (RF) analysis of double-gate tunnel FET (DG TFETs) with a combination of three different gate dielectric such as SiO<inf>2</inf>, stacked oxide (SiO<inf>2</inf>+HfO<inf>2</inf>) and, HfO<inf>2</inf> is performed by using Silvaco-Atlas technology computer added (TCAD) simulation tool. Figure of merits (FOM‘s) like transconductance (g<inf>m</inf>), output conductance (g<inf>ds</inf>), gate capacitance (C<inf>gg</inf>), unity gain cut-off frequency (f<inf>i</inf>), gain bandwidth product (GBW) and transconductance generation factor (gm/Id) are analyzed in the present study and compare with them. Higher I<inf>ON</inf>/IoFF (10<sup>11</sup>) of high-k only dielectric DGTFET (D3), can reduce dynamic as well as static power dissipation in digital circuits. Similarly higher RF FOM's i.e. f<inf>t</inf> and GBW in gigahertz range projects the utility of D3 device for RF Circuits.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124008661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evaluation Of Under Ground Cable Parameters under Off Transient Condition 非瞬态状态下地下电缆参数的评估
Sanhita Mishra, S. Swain, A. Routray
{"title":"Evaluation Of Under Ground Cable Parameters under Off Transient Condition","authors":"Sanhita Mishra, S. Swain, A. Routray","doi":"10.1109/IEMENTech48150.2019.8981121","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981121","url":null,"abstract":"In this paper a mathematical model for analyzing the cable parameter based on travelling wave phenomena is presented. The model developed and presented in this paper is a generalized structure for steady state analysis of cable during of state transient condition. The model takes into account the outer covering parameters along with environmental parameter in order to calculate the impedance and admittance of the cable. A Matlab program has been developed to find out the optimized result for off transient problems.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"294 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121134382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PV-fed Dual-Stage Closed Loop V-f Control Scheme of Stand-Alone Microgrid 独立微电网pv馈电双级闭环V-f控制方案
Sourav Chakraborty, Deepak Kumar, P. Thakura
{"title":"PV-fed Dual-Stage Closed Loop V-f Control Scheme of Stand-Alone Microgrid","authors":"Sourav Chakraborty, Deepak Kumar, P. Thakura","doi":"10.1109/IEMENTech48150.2019.8981119","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981119","url":null,"abstract":"With increasing energy requirements, the growing need for robustness in power processing units plays a significant role in monitoring maximum power besides sustaining system consistency. As microgrids rely on isolated renewable energy, fluctuations in load demand may have malignant effects on the system stability. A major portion of this paper describes a micro grid system that involves the incorporation of dual-stage conversion of PV power in standalone mode using the MPPT approach and offers a control strategy involving voltage-frequency (Vf) as the main parameters for delivering adequate pulses to the inverter via PWM. A computed model is simulated according to its physical equivalent using Matlab/Simulink. The effectiveness of this technique is further verified by the results.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127019464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computation of Photonic Bandgap in 1D Photonic Crystal using Dispersion Relation 利用色散关系计算一维光子晶体中的光子带隙
Urmimala Dey, Sangita Das, S. De, A. Deyasi
{"title":"Computation of Photonic Bandgap in 1D Photonic Crystal using Dispersion Relation","authors":"Urmimala Dey, Sangita Das, S. De, A. Deyasi","doi":"10.1109/IEMENTech48150.2019.8981016","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981016","url":null,"abstract":"Two lowermost photonic bandgaps for one-dimensional photonic crystal are computed from dispersion relation. AlxGl1-xN/GaN material is considered for simulation purpose, and material composition is changed to calculate the shift of midband frequency corresponding to the photonic bandgap. Both TE and TM polarizations are considered for bandgap computation, and results are evaluated from the first principle analysis. Calculations are made in normalized scale, and thus it can be fitted in the desired frequency spectrum when calculated from plane wave expansion method. Findings are utilized for design of optical filter.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124984577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Automated Light Control with Voltage Triggered Sensing and Monitoring Objects Using Arduino 基于Arduino的电压触发传感和监测对象的自动光控制
P. Dutta, K. Das, Protyush De, Prithvi Guha, Kumar Patra
{"title":"An Automated Light Control with Voltage Triggered Sensing and Monitoring Objects Using Arduino","authors":"P. Dutta, K. Das, Protyush De, Prithvi Guha, Kumar Patra","doi":"10.1109/IEMENTech48150.2019.8981281","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981281","url":null,"abstract":"We present an automation project based on Arduino to monitor and control the cinema hall indoor lighting based on the identification of designed sensor which detects the change in desired voltage. We aim to adopt different systems to achieve the required operations that no longer require time-consuming dim lighting or switch by implementing manual switching. In the proposed work we will design using an Arduino microcontroller board with an automatic triggered voltage threshold circuit which will be product based and will have different parameters to sense the dim state in the darkness and the bright screen view in the cinema hall automatically. Secondly the proposed automation is expected to skip the total darkness when the cinema hall is empty during non operational hours. The proposed hardware sensor has been prototyped in Orcad pspice simulation and the model reliability has been verified based on voltage and time parameters to identify the trigger threshold. We will enable using a relay based circuit which will have different configurations enabled with a counter for a circuit for the entire cinema time period. The proposed system can be implemented in real time to give better energy efficiency to the entire system. The future perspective of the same system can be applied in home automation and green buildings especially in indoor automation and lighting.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129987161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Fullerene Nanoparticles on Barrier Height of Crystal Violet Dye Based Organic Device 富勒烯纳米颗粒对结晶紫染料基有机器件势垒高度的影响
Sudipta Sen, N. Manik
{"title":"Effect of Fullerene Nanoparticles on Barrier Height of Crystal Violet Dye Based Organic Device","authors":"Sudipta Sen, N. Manik","doi":"10.1109/IEMENTech48150.2019.8981122","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981122","url":null,"abstract":"In this work, we have estimated the barrier height (Φb) of ITO coated glass/Crystal Violet (CV) dye/Aluminium (AI) based organic device and subsequently we have also observed the effect of fullerene (C60) nanoparticles on Φb. Presence of C60nanoparticles reduce barrier height and provides easy path for charge percolation. We have used ITO coated glass as front electrode and aluminium as back electrode to form the organic device. This organic device has been prepared with and without C60nanoparticles by using spin coating technique. We have measured the steady state current-voltage (I- V) characteristics of the device to estimate barrier height (Φb) of the device. Φbis reduced from 0.87 eV to 0.75 eV in the presence of C60nanoparticles. The barrier height is also estimated by using another alternative method which is known as Norde method. By using Norde method, Φbis estimated which reduces from 0.83 eV to 0.79 eV in presence of C60nanoparticles. Both the methods show good consistency with each other. Reduction of the interfacial barrier height in presence of fullerene indicates the enhancement of charge injection through the metal - organic dye interface. By suitable addition of C60nanoparticles within the CV dye it is possible to modify the barrier height and enhance the current injection through metal-organic dye interface which also allows the device to be turned on at much lower voltages.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129184317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Confidence Belief Function Weighted Parallel Rank-level Fusion for Face recognition 基于置信度信念函数加权平行秩-水平融合的人脸识别
A. Dey, S. Dey, Alok Kumar Roy, Manas Ghoslr, Satadal Chakraborty, Debaditya Kundu
{"title":"Confidence Belief Function Weighted Parallel Rank-level Fusion for Face recognition","authors":"A. Dey, S. Dey, Alok Kumar Roy, Manas Ghoslr, Satadal Chakraborty, Debaditya Kundu","doi":"10.1109/IEMENTech48150.2019.8981075","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981075","url":null,"abstract":"In this paper, proficient feature extraction techniques using efficient neural networks (NN) with evidence theory for face recognition are presented. This approach is established to reduce the computation periods required by these NN. Evidence theory based single or multi biometric fusion methods have established promising performance, but they cannot handle the uncertainty appropriately, suggesting that further improvement of the performance of single biometric authentication systems. Conventional ranking is upgraded, using some associations among the outputs (belief confidence factors) of a classifier. Then, the final result is achieved by fusing results from the combined classifier output (belief confidence factors) with evidence theory. The face database usually severely affected by various degradations such as, illumination, noise and pose variations etc. which affects the overall recognition accuracy. The outcome establishes that the proposed rank-level fusion method attains superior recognition accuracy than other feature extraction and other related rank level fusion approaches.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"2000 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116885721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EEG as a tool to measure cognitive load while playing Sudoku: A preliminary study 脑电图作为测量数独游戏时认知负荷的工具:初步研究
Divya Shakti, Shuvodeep Saha, V. Sardana, Pankaj Akula, C. Ananda, S. Tewary
{"title":"EEG as a tool to measure cognitive load while playing Sudoku: A preliminary study","authors":"Divya Shakti, Shuvodeep Saha, V. Sardana, Pankaj Akula, C. Ananda, S. Tewary","doi":"10.1109/IEMENTech48150.2019.8981192","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981192","url":null,"abstract":"Cognitive load or mental workload in human beings is an important parameter associated with the task being performed. The level of task and the learning curve for any task has a certain cognitive load or mental workload. Apart from causing stress and mental exhaustion, increase in cognitive load beyond a critical limit may affect the performance on the end task. There is a need to explore noninvasive and non- intrusive physiological means of measuring cognitive load to identify the subjective performance and well been. This paper discusses identification of EEG as one of the means, identification of suitable EEG frequency bands and spatial locations to assess the cognitive load based on available literature and also to demonstrate measured load based on an experimental study performed using a commonly played Sudoku game.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123459661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信