Impact of Gate Dielectrics on Analog/RF Performance of Double Gate Tunnel Field Effect Transistor

2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI:10.1109/IEMENTech48150.2019.8981283

P. Singh, K. Baral, S. Chander, Sanjay Kumar, M. Tripathy, A. K. Singh, S. Jit

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引用次数: 2

Abstract

In this paper, analog/radio frequency (RF) analysis of double-gate tunnel FET (DG TFETs) with a combination of three different gate dielectric such as SiO2, stacked oxide (SiO2+HfO2) and, HfO2 is performed by using Silvaco-Atlas technology computer added (TCAD) simulation tool. Figure of merits (FOM‘s) like transconductance (gm), output conductance (gds), gate capacitance (Cgg), unity gain cut-off frequency (fi), gain bandwidth product (GBW) and transconductance generation factor (gm/Id) are analyzed in the present study and compare with them. Higher ION/IoFF (10¹¹) of high-k only dielectric DGTFET (D3), can reduce dynamic as well as static power dissipation in digital circuits. Similarly higher RF FOM's i.e. ft and GBW in gigahertz range projects the utility of D3 device for RF Circuits.

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栅极介质对双栅隧道场效应晶体管模拟/射频性能的影响

本文利用Silvaco-Atlas技术计算机辅助(TCAD)仿真工具，对SiO2、堆叠氧化物(SiO2+HfO2)和HfO2三种不同栅极介质组合的双栅隧道场效应管(DG tfet)进行了模拟/射频(RF)分析。本文分析了跨导(gm)、输出导(gds)、栅极电容(Cgg)、单位增益截止频率(fi)、增益带宽积(GBW)和跨导产生因子(gm/Id)等优点图，并与之进行了比较。仅高k介电DGTFET (D3)具有较高的离子/IoFF(1011)，可以降低数字电路中的动态和静态功耗。同样，更高的RF FOM，即千兆赫范围内的ft和GBW，表明D3器件在RF电路中的实用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)

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