富勒烯纳米颗粒对结晶紫染料基有机器件势垒高度的影响

Sudipta Sen, N. Manik
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引用次数: 4

摘要

在这项工作中,我们估计了ITO涂层玻璃/结晶紫(CV)染料/铝(AI)基有机器件的阻挡高度(Φb),随后我们还观察了富勒烯(C60)纳米颗粒对Φb的影响。c60纳米颗粒的存在降低了势垒高度,并为电荷渗透提供了便利的途径。我们采用ITO镀膜玻璃作为前电极,铝作为后电极形成有机器件。采用自旋镀膜技术制备了含c60纳米粒子和不含c60纳米粒子的有机器件。我们测量了器件的稳态电流-电压(I- V)特性,以估计器件的势垒高度(Φb)。Φbis在c60纳米粒子的存在下从0.87 eV降低到0.75 eV。屏障高度也可用另一种替代方法估计,即诺德法。通过Norde方法,Φbis估计c60纳米粒子存在时,其温度从0.83 eV降至0.79 eV。两种方法具有良好的一致性。富勒烯存在时界面势垒高度的降低表明通过金属-有机染料界面的电荷注入增强。通过在CV染料中适当添加c60纳米颗粒,可以修改势垒高度并增强通过金属-有机染料界面的电流注入,这也允许器件在更低的电压下打开。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Fullerene Nanoparticles on Barrier Height of Crystal Violet Dye Based Organic Device
In this work, we have estimated the barrier height (Φb) of ITO coated glass/Crystal Violet (CV) dye/Aluminium (AI) based organic device and subsequently we have also observed the effect of fullerene (C60) nanoparticles on Φb. Presence of C60nanoparticles reduce barrier height and provides easy path for charge percolation. We have used ITO coated glass as front electrode and aluminium as back electrode to form the organic device. This organic device has been prepared with and without C60nanoparticles by using spin coating technique. We have measured the steady state current-voltage (I- V) characteristics of the device to estimate barrier height (Φb) of the device. Φbis reduced from 0.87 eV to 0.75 eV in the presence of C60nanoparticles. The barrier height is also estimated by using another alternative method which is known as Norde method. By using Norde method, Φbis estimated which reduces from 0.83 eV to 0.79 eV in presence of C60nanoparticles. Both the methods show good consistency with each other. Reduction of the interfacial barrier height in presence of fullerene indicates the enhancement of charge injection through the metal - organic dye interface. By suitable addition of C60nanoparticles within the CV dye it is possible to modify the barrier height and enhance the current injection through metal-organic dye interface which also allows the device to be turned on at much lower voltages.
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