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Journal De Physique Iii最新文献

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A Saturated Synchronous Machine Study for the Converter-Machine-Command Set Simulation 转换器-机器-命令集仿真的饱和同步机研究
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997255
S. Lasquellee, M. Benkhoris, M. Feliachi
{"title":"A Saturated Synchronous Machine Study for the Converter-Machine-Command Set Simulation","authors":"S. Lasquellee, M. Benkhoris, M. Feliachi","doi":"10.1051/JP3:1997255","DOIUrl":"https://doi.org/10.1051/JP3:1997255","url":null,"abstract":"The electromagnetic study presented models a saturated synchronous machine for the Converter-Machine-Command (CMC) set simulation. The proposed method is based on a modified Park model (Garrido and De Jaeger Model: GDJ model [1,2]) when calculating the GDJ model laws and the GDJ model parameters using a field computation based on the Finite Element Method (FEM). The first model (GDJ model) is modified in accordance to the field results and a 4.8% improvement has been estimated. The model validity is obtained when comparing the computed and measured reactances. The improved model is elaborated in order to be introduced into the saturated machine algorithm to simulate the CMC set. In comparison with the model based on experiments, the proposed one avoids complex tests on high power range synchronous machines. On the other hand, this study reveals Potier parameter variations with the saturation state whereas the conventional methods consider it as a constant value. Finally we develop the saturated synchronous machine model associated with the converter.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123438141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reduction of Space Charge Recombination Current with a Self Passivated GaAlAs/GaInP/GaAs HBT Structure 自钝化GaAlAs/GaInP/GaAs HBT结构降低空间电荷复合电流
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997247
R. Bourguiga, J. Palmier, C. Dubon-Chevallier
{"title":"Reduction of Space Charge Recombination Current with a Self Passivated GaAlAs/GaInP/GaAs HBT Structure","authors":"R. Bourguiga, J. Palmier, C. Dubon-Chevallier","doi":"10.1051/JP3:1997247","DOIUrl":"https://doi.org/10.1051/JP3:1997247","url":null,"abstract":"A Passivated HBT structure which includes a thin GaInP layer between the GaAlAS emitter and the GaAs base layer has been proposed in order to reduce surface and space charge recombination current, while keeping a low p-type ohmic contact resistivity. The optimization of the GaInP layer thickness has been carried out leading to a value of 30 nm.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121202299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Vacuum Ultraviolet Absorption of S2OF10 S2OF10的真空紫外吸收
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997243
A. Casanovas, I. Coll, C. Pradayrol, J. Guelfucci, J. Casanovas
{"title":"Vacuum Ultraviolet Absorption of S2OF10","authors":"A. Casanovas, I. Coll, C. Pradayrol, J. Guelfucci, J. Casanovas","doi":"10.1051/JP3:1997243","DOIUrl":"https://doi.org/10.1051/JP3:1997243","url":null,"abstract":"Les coefficients d'absorption k o (m -1 100 kPa -1 ) du S 2 OF 10 qui constitue l'un des produits de decomposition gazeux du SF 6 soumis a des contraintes electriques ont ete mesures entre 122 et 202 nm. Les experiences ont ete realisees a la temperature de 298 K avec une resolution de 0,1 nm sur toute la gamme de longueurs d'onde. Ces resultats completent ceux que nous avons precedemment publies sur l'absorption du SF 6 , du SF 4 , du SOF 2 et du SO 2 F 2 dans le meme domaine de longueurs d'onde [1].","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124339583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dépôts par projection de poudre dans un faisceau laser Nd:YAG : cas des faibles puissances 在Nd:YAG激光束中投射粉末沉积:低功率的情况
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997257
J. Jouvard, D. Grevey, F. Lemoine, A. Vannes
{"title":"Dépôts par projection de poudre dans un faisceau laser Nd:YAG : cas des faibles puissances","authors":"J. Jouvard, D. Grevey, F. Lemoine, A. Vannes","doi":"10.1051/JP3:1997257","DOIUrl":"https://doi.org/10.1051/JP3:1997257","url":null,"abstract":"Ce travail fait suite a celui de F. Lemoine [1]. Il concerne la modelisation des depots realises par projection d'une poudre metallique dans un faisceau laser Nd:YAG. Son originalite concerne notamment l'utilisation de faibles puissances laser (P < 800 W). Dans ce domaine, nous avons montre l'existence, en fonction de la puissance laser, de deux seuils associes a la masse des revetements realises. L'etude theorique est fondee sur le calcul de la fluence (J/cm- 2 ) fournie au substrat et l'utilisation d'un modele de transfert de chaleur a l'interieur de celui-ci. Les hypotheses emises et verifiees sont que: i) le premier seuil correspond a la puissance laser minimale a mettre en oeuvre afin de porter a fusion la surface du substrat, ii) le second seuil correspond quant a lui a la puissance requise pour porter la poudre a sa temperature de fusion lors de sa chute.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124492969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Impédancemètre automatique 100 Ω-1 TΩ 自动Impédancemètre 100ΩΩ- T
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997250
R. Nasri, A. Siblini, L. Jorat, G. Noyel
{"title":"Impédancemètre automatique 100 Ω-1 TΩ","authors":"R. Nasri, A. Siblini, L. Jorat, G. Noyel","doi":"10.1051/JP3:1997250","DOIUrl":"https://doi.org/10.1051/JP3:1997250","url":null,"abstract":"Dans ce travail nous presentons un systeme haute impedance totalement automatique fonctionnant dans la gamme de frequence 1 mHz-10 kHz et concu pour la mesure des impedances complexes (Rp // Cp) jusqu'a 10 12 Ω. Pour cela nous avons construit, autour d'un analyseur vectoriel, un electrometre haute impedance programmable fonctionnant en mode shunt. Ce dispositif utilisant des resistances de hautes valeurs et des condensateurs a faibles fuites, fait appel a l'electronique haute impedance; les composants sont selectionnes au moyen de relais Reed de tres haute isolation commandes par un bus VXI.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124603378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Algorithme génétique et développement de Taylor de la solution éléments finis pour l'optimisation d'un dispositif électromagnétique 电磁器件优化有限元解的遗传算法与泰勒发展
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997251
L. Saludjian, J. Coulomb, A. Izabelle
{"title":"Algorithme génétique et développement de Taylor de la solution éléments finis pour l'optimisation d'un dispositif électromagnétique","authors":"L. Saludjian, J. Coulomb, A. Izabelle","doi":"10.1051/JP3:1997251","DOIUrl":"https://doi.org/10.1051/JP3:1997251","url":null,"abstract":"Cet article presente l'utilisation d'un algorithme genetique pour l'optimisation d'un dispositif electromagnetique constitue de deux bobines supraconductrices. Pour reduire le cout de calcul des evaluations - tres important dans le cas d'une methode elements finis - une methode rapide, basee sur des developpements de Taylor d'ordres eleves de la solution elements finis, sera employee.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123830179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modélisation macroscopique des milieux stratifiés conducteurs 导电层压介质的宏观建模
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997256
Ernest Matagne, J. Conard
{"title":"Modélisation macroscopique des milieux stratifiés conducteurs","authors":"Ernest Matagne, J. Conard","doi":"10.1051/JP3:1997256","DOIUrl":"https://doi.org/10.1051/JP3:1997256","url":null,"abstract":"Many laminated structures are recognised in Electrotechnics : magnetic cores, flat conductors windings, slotted surfaces... These structures exhibit macroscopic properties, as magnetic than electric ones. This paper shows how these characteristics can be obtained by homogenisation. It deals with linear materials but taking into account the effect of eddy currents, as well on the macroscopic magnetic permeability as on the macroscopic electric conductivity, which become then complex numbers. An example of use of the macroscopic properties is provided.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127376588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Caractérisation des dégradations de transistors MOS de puissance sous irradiations 功率MOS晶体管在辐照下降解的表征
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997245
E. Bendada, K. Raïs, P. Mialhe
{"title":"Caractérisation des dégradations de transistors MOS de puissance sous irradiations","authors":"E. Bendada, K. Raïs, P. Mialhe","doi":"10.1051/JP3:1997245","DOIUrl":"https://doi.org/10.1051/JP3:1997245","url":null,"abstract":"Une nouvelle methode de caracterisation de la degradation sous irradiations des transistors a structure D-MOS de type HEXFET est proposee. Elle est basee sur l'analyse des proprietes de la diode substrat-drain en utilisant les methodes bien etablies de modelisation des jonctions p-n. La description des caracteristiques courant-tension a l'aide des modeles permettant de separer les processus de diffusion et de recombinaison des porteurs, conduit a determiner d'une maniere simple des parametres importants: resistance serie, facteur de qualite, courant inverse de recombinaison et courant inverse de diffusion. La forme des caracteristiques courant-tension de la jonction avec les conditions de fonctionnement est trouvee dependante des defauts induits par les irradiations. Il est montre que les valeurs de la resistance serie, du facteur de qualite et du courant inverse de recombinaison augmentent avec la tension de grille et avec la dose absorbee. Le courant inverse de diffusion est non altere par l'exposition aux radiations.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117214651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Étude et modélisation des mécanismes complexes en conception assistée par ordinateur 计算机辅助设计中复杂机制的研究和建模
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997253
K. Satori, B. E. Kihel
{"title":"Étude et modélisation des mécanismes complexes en conception assistée par ordinateur","authors":"K. Satori, B. E. Kihel","doi":"10.1051/JP3:1997253","DOIUrl":"https://doi.org/10.1051/JP3:1997253","url":null,"abstract":"La conception des systemes mecaniques devient tres automatisee dans le cadre de la Conception Mecanique Assistee par Ordinateur (C.M.A.O.). La modelisation geometrique est effectuee de plus en plus avec l'aide des logiciels de Dessin Assiste par Ordinateur (D.A.O.). La modelisation des structures et la simulation numerique s'effectuent generalement par la Methode des Elements Finis (M.E.F.). Le couplage de ces deux techniques permet de donner une image concrete et realiste des resultats de calcul issus des methodes de discretisation (concentration des contraintes, repartition des charges, etc.). L'application qu'on presente concerne une boite de vitesse a arbres paralleles, comporte deux etages de reductions (reducteur de vitesse). La chaine cinematique est constituee d'arbres d'engrenages a dentures droites et de paliers a roulements a billes et a rouleaux qui realisent la liaison avec le carter. Le probleme pose dans cette application consiste a quantifier le comportement dynamique et vibratoire afin de qualifier la conception du reducteur.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130381707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Metastability of Deep Donor Defects in Semiconductor Compounds 半导体化合物中深层供体缺陷的亚稳态
Journal De Physique Iii Pub Date : 1997-11-01 DOI: 10.1051/JP3:1997246
J. Bourgoin, M. Zazoui, S. Alaya, T. Neffati
{"title":"The Metastability of Deep Donor Defects in Semiconductor Compounds","authors":"J. Bourgoin, M. Zazoui, S. Alaya, T. Neffati","doi":"10.1051/JP3:1997246","DOIUrl":"https://doi.org/10.1051/JP3:1997246","url":null,"abstract":"There is a whole class of deep donor defects which exhibit a metastable character, i.e. transform into a metastable state after a specific photo-excitation. Typical examples are the EL2 defect in GaAs and the DX center in several ternary III-V compounds. We shall present other defects which behave similarly, demonstrating that this metastable character is not specific of a defect but is a common behaviour of a class of defects. We shall also demonstrate that for all these defects the thermal excitation of electrons takes place in the L conduction band and that the metastable character is a direct consequence of this. This leads to a new concept of a metastable state, a result of an electronic metastability due to a band structure effect and not to a strong electron-phonon interaction.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130194934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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