自钝化GaAlAs/GaInP/GaAs HBT结构降低空间电荷复合电流

Journal De Physique Iii Pub Date : 1997-11-01 DOI:10.1051/JP3:1997247

R. Bourguiga, J. Palmier, C. Dubon-Chevallier

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引用次数: 2

摘要

为了减少表面和空间电荷复合电流，同时保持低p型欧姆接触电阻率，提出了一种钝化HBT结构，该结构在GaAs发射极和GaAs基材层之间包含薄GaInP层。对GaInP层厚度进行了优化，使其厚度达到30 nm。

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Reduction of Space Charge Recombination Current with a Self Passivated GaAlAs/GaInP/GaAs HBT Structure

A Passivated HBT structure which includes a thin GaInP layer between the GaAlAS emitter and the GaAs base layer has been proposed in order to reduce surface and space charge recombination current, while keeping a low p-type ohmic contact resistivity. The optimization of the GaInP layer thickness has been carried out leading to a value of 30 nm.

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Journal De Physique Iii

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