半导体化合物中深层供体缺陷的亚稳态

J. Bourgoin, M. Zazoui, S. Alaya, T. Neffati
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引用次数: 2

摘要

有一类深供体缺陷表现出亚稳态特征,即在特定的光激发后转变为亚稳态。典型的例子是GaAs中的EL2缺陷和几种三元III-V化合物中的DX中心。我们将介绍其他行为类似的缺陷,证明这种亚稳态特征不是缺陷所特有的,而是一类缺陷的共同行为。我们还将证明,对于所有这些缺陷,电子的热激发发生在L导带,亚稳特性是这一直接结果。这导致了亚稳态的新概念,这是由于能带结构效应而不是强电子-声子相互作用导致的电子亚稳态的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Metastability of Deep Donor Defects in Semiconductor Compounds
There is a whole class of deep donor defects which exhibit a metastable character, i.e. transform into a metastable state after a specific photo-excitation. Typical examples are the EL2 defect in GaAs and the DX center in several ternary III-V compounds. We shall present other defects which behave similarly, demonstrating that this metastable character is not specific of a defect but is a common behaviour of a class of defects. We shall also demonstrate that for all these defects the thermal excitation of electrons takes place in the L conduction band and that the metastable character is a direct consequence of this. This leads to a new concept of a metastable state, a result of an electronic metastability due to a band structure effect and not to a strong electron-phonon interaction.
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