{"title":"半导体化合物中深层供体缺陷的亚稳态","authors":"J. Bourgoin, M. Zazoui, S. Alaya, T. Neffati","doi":"10.1051/JP3:1997246","DOIUrl":null,"url":null,"abstract":"There is a whole class of deep donor defects which exhibit a metastable character, i.e. transform into a metastable state after a specific photo-excitation. Typical examples are the EL2 defect in GaAs and the DX center in several ternary III-V compounds. We shall present other defects which behave similarly, demonstrating that this metastable character is not specific of a defect but is a common behaviour of a class of defects. We shall also demonstrate that for all these defects the thermal excitation of electrons takes place in the L conduction band and that the metastable character is a direct consequence of this. This leads to a new concept of a metastable state, a result of an electronic metastability due to a band structure effect and not to a strong electron-phonon interaction.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The Metastability of Deep Donor Defects in Semiconductor Compounds\",\"authors\":\"J. Bourgoin, M. Zazoui, S. Alaya, T. Neffati\",\"doi\":\"10.1051/JP3:1997246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is a whole class of deep donor defects which exhibit a metastable character, i.e. transform into a metastable state after a specific photo-excitation. Typical examples are the EL2 defect in GaAs and the DX center in several ternary III-V compounds. We shall present other defects which behave similarly, demonstrating that this metastable character is not specific of a defect but is a common behaviour of a class of defects. We shall also demonstrate that for all these defects the thermal excitation of electrons takes place in the L conduction band and that the metastable character is a direct consequence of this. This leads to a new concept of a metastable state, a result of an electronic metastability due to a band structure effect and not to a strong electron-phonon interaction.\",\"PeriodicalId\":237595,\"journal\":{\"name\":\"Journal De Physique Iii\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal De Physique Iii\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JP3:1997246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal De Physique Iii","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JP3:1997246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Metastability of Deep Donor Defects in Semiconductor Compounds
There is a whole class of deep donor defects which exhibit a metastable character, i.e. transform into a metastable state after a specific photo-excitation. Typical examples are the EL2 defect in GaAs and the DX center in several ternary III-V compounds. We shall present other defects which behave similarly, demonstrating that this metastable character is not specific of a defect but is a common behaviour of a class of defects. We shall also demonstrate that for all these defects the thermal excitation of electrons takes place in the L conduction band and that the metastable character is a direct consequence of this. This leads to a new concept of a metastable state, a result of an electronic metastability due to a band structure effect and not to a strong electron-phonon interaction.