Reduction of Space Charge Recombination Current with a Self Passivated GaAlAs/GaInP/GaAs HBT Structure

Abstract

A Passivated HBT structure which includes a thin GaInP layer between the GaAlAS emitter and the GaAs base layer has been proposed in order to reduce surface and space charge recombination current, while keeping a low p-type ohmic contact resistivity. The optimization of the GaInP layer thickness has been carried out leading to a value of 30 nm.