Solar RRL最新文献

{"title":"Neutron Resilience of Flexible Perovskite Solar Cells Using PTAA-Derived Hole Transport Layers","authors":"Giulio Koch,&nbsp;Daniel Augusto Machado de Alencar,&nbsp;Cullen Chosy,&nbsp;Amanda Generosi,&nbsp;Flavia Righi Riva,&nbsp;Samyuktha Noola,&nbsp;Farshad Jafarzadeh,&nbsp;Kyle Frohna,&nbsp;Matteo Bonomo,&nbsp;Pierluigi Quagliotto,&nbsp;Paolo Rech,&nbsp;Carlo Cazzaniga,&nbsp;Marco Ottavi,&nbsp;Francesca De Rossi,&nbsp;Barbara Paci,&nbsp;Samuel D. Stranks,&nbsp;Claudia Barolo,&nbsp;Francesca Brunetti","doi":"10.1002/solr.202500126","DOIUrl":"https://doi.org/10.1002/solr.202500126","url":null,"abstract":"<p>Flexible perovskite solar cells hold promise of being an enabling technology for space missions: by reducing the encumbrance and weight of the payload's power system, launch costs can be minimized. The increased interest, however, must be accompanied by thorough testing under a broad range of space-related sources of degradation and investigation of their effects on the layer stack. In this work, the resilience against atmospheric neutron radiation (&lt;800 MeV) of flexible devices is studied, using two different hole transporting materials: a commercial PTAA and a PTAA-based in-house synthesized polymer. After 5   10⁹ particles/cm² irradiation, 380 times higher than the yearly fast neutron fluence in low Earth orbit, the devices show good stability, with efficiency losses below 20%. Further investigation by light intensity-dependent JV scans, hyperspectral photoluminescence microscopy, X-ray diffraction, X-ray reflectivity, and atomic force microscopy reveals that the neutron radiation mainly affects the perovskite/hole transport layer interface, to a different extent depending on the material. This work confirms that accelerated stress testing is an important tool to determine the feasibility of this technology for space applications and provides insights on the damages caused by atmospheric neutrons which will help inform future decisions for the fabrication of space-resilient flexible perovskite solar cells.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 14","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144687940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding the Effects of Inhomogeneities at the Back Interface of CdTe-Based Solar Cells Using 2D Modeling","authors":"Ian M. Glass,&nbsp;Jared D. Friedl,&nbsp;Thomas A. M. Fiducia,&nbsp;Abasi Abudulimu,&nbsp;Eva M. Mulloy,&nbsp;Manoj K. Jamarkattel,&nbsp;Ebin Bastola,&nbsp;Randy J. Ellingson,&nbsp;Michael J. Heben,&nbsp;Adam B. Phillips","doi":"10.1002/solr.202500269","DOIUrl":"https://doi.org/10.1002/solr.202500269","url":null,"abstract":"<p>One-dimensional modeling cannot capture lateral inhomogeneities in CdTe-based devices. Here, we use 2D modeling to investigate the role of varying energetics at the back interface. We consider improvements in the back interface layer (BIL) through either reducing back surface recombination velocity (BSRV) or decreasing the downward band bending near the back interface. We show that when the BSRV is reduced, but strong downward band bending remains, there is no change in the device performance until the BSRV of 90% of the back interface is improved by the BIL. On the other hand, any coverage with a BIL that improves band bending results in device improvements. We use band bending, back interface recombination current densities, and voltage dependent current flow through the device to understand these improvements. The modeling shows that lateral flow of carriers greatly affects device performance, which is not captured in parallel diode modeling, and demonstrates improved understanding with 2D modeling.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 15","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500269","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Assembled Monolayer Templating for Engineered Nanopinholes in Passivated Contact Solar Cells","authors":"Bill Nemeth,&nbsp;David L. Young,&nbsp;Matthew R. Page,&nbsp;San Theingi,&nbsp;Chun-Sheng Jiang,&nbsp;Harvey Guthrey,&nbsp;Paul Stradins","doi":"10.1002/solr.202500200","DOIUrl":"https://doi.org/10.1002/solr.202500200","url":null,"abstract":"<p>We present a novel self-assembled monolayer (SAM)-based technique to make nanopinhole-enabled passivated contacts on silicon solar cells by tuning the SAM coverage area and etch selectivity. We deposit trimethyl-silyl Si(CH₃)₃ groups using hexamethyldisilazane (HMDS) as the precursor over passivating dielectric layers and their stacks (SiO₂, SiN_<i>x</i>, SiO₂/SiN_<i>x</i>) and interrupt the HMDS attachment chemistry shortly before a full monolayer is formed on its surface. Subsequent etching in dilute HF produces pinholes through the dielectric layers due to the higher etch resistance of the SAM to HF etching. The pinhole areal density (10⁴–10⁸/cm²) and size (10–1000 nm) can be tuned both by duration of HMDS attachment and HF etch time. Pinholes were characterized by atomic force microscopy, tetramethylammonium hydroxide (TMAH) selective etch, and Ag decoration by electroless plating. Polysilicon (poly-Si) passivated contacts enabled by pinholes were formed by subsequent deposition of doped amorphous silicon (a-Si:H) followed by thermal crystallization and dopant drive-in. At optimal areal pinhole density ≈10⁷/cm², contacts exhibit both passivation and carrier transport via pinholes as evidenced by electron beam induced current, transmission line measurements, and carrier lifetime measurements. Solar cells based with these pinhole contacts show <i>V</i>_oc = 723 mV and FF = 80.3%. The remaining SAM layer does not affect device performance.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 14","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500200","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144687941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Detailed Bias-Dependent Free Energy Loss Analysis for Proposing Device Optimization Strategies in Silicon Heterojunction Solar Cell Design","authors":"Habtamu Tsegaye Gebrewold,&nbsp;Karsten Bittkau,&nbsp;Andreas Lambertz,&nbsp;Uwe Rau,&nbsp;Kaining Ding","doi":"10.1002/solr.202500311","DOIUrl":"https://doi.org/10.1002/solr.202500311","url":null,"abstract":"<p>A multiscale electro-optical device model is employed to investigate free energy and other losses in a silicon heterojunction (SHJ) solar cell. A finite element method-based device model is coupled with free energy loss analysis (FELA) to calculate detailed bias voltage-dependent losses in terms of <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mrow>\u0000 <mi>mAcm</mi>\u0000 </mrow>\u0000 <mrow>\u0000 <mo>−</mo>\u0000 <mn>2</mn>\u0000 </mrow>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>$mathrm{mAcm}^{-2}$</annotation>\u0000 </semantics></math> and <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mrow>\u0000 <mi>mWcm</mi>\u0000 </mrow>\u0000 <mrow>\u0000 <mo>−</mo>\u0000 <mn>2</mn>\u0000 </mrow>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>$mathrm{mWcm}^{-2}$</annotation>\u0000 </semantics></math>. Such an approach provides insight into identifying possible pathways for synergetic optimization and redesigning a solar cell device in both laboratory and mass production settings. The SHJ solar cell investigated in this work demonstrates that the hole-selective contact (HSC) is responsible for a significant portion of the free energy loss. At maximum power point, a power density of ~1.6 mWcm⁻² at 1 sun is lost associated with carrier transport in HSC and recombination at both selective contacts. This results in a 1.6% absolute loss in power conversion efficiency (PCE). Auger recombination in the wafer limits the open-circuit voltage. The FELA suggests a pathway for synergistic optimization of the device to regain a significant portion of the ~2.6% absolute loss in PCE. Simultaneously adjusting the conductivity of a-Si layers in HSC and the concentration of free majority carriers in the wafer can improve the fill factor (FF) to ~87% and PCE close to 26%.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 15","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500311","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Degradation and Accelerated Recovery of Surface Passivation in n+, p+, and Intrinsic Poly-Si/SiOx Passivating Contacts for Silicon Solar Cells","authors":"Aditya R. Ratnapagol,&nbsp;William Nemeth,&nbsp;Pauls Stradins,&nbsp;Sumit Agarwal,&nbsp;David L. Young","doi":"10.1002/solr.202500133","DOIUrl":"https://doi.org/10.1002/solr.202500133","url":null,"abstract":"<p>We report on the degradation and recovery of surface passivation of fired <i>poly</i>-Si/SiO_<i>x</i> passivating contacts with hydrogen containing Al₂O₃ during annealing in the dark and under illumination. Upon firing to a peak temperature of 670°C, the <i>iV</i>_oc for symmetric test structures with <i>n</i>⁺, <i>p</i>⁺, and intrinsic <i>poly</i>-Si/SiO_<i>x</i> contacts decreases due to a loss of surface passivation. Upon further annealing over the temperature range of 200–350°C in the dark, depending on the type of doping, the surface passivation either shows further degradation followed by recovery, or direct recovery to the initial <i>iV</i>_oc. Annealing at higher temperatures and/or higher illumination intensities accelerates the kinetics for both degradation and recovery processes. We show that the degradation and recovery processes are thermally activated and proceed identically in subsequent firing and annealing steps showing their cyclic nature. We present a series reaction model to explain the kinetics of degradation and recovery processes for <i>n</i>⁺ and intrinsic <i>poly</i>-Si/SiO_<i>x</i> contacts. By fitting the model's rate expressions to the data, the determined effective activation energy barriers for degradation and recovery for <i>n</i>⁺ <i>poly</i>-Si/SiO_<i>x</i> contacts in the dark are 1.24 and 1.51 eV, which are lowered under 7.5 Suns illumination to 0.76 and 1.15 eV, respectively.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 14","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500133","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144687970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Perovskite Solar Cells with Current Collection Through-Hole Electrodes","authors":"Hayato Okawa,&nbsp;Yuya Momose,&nbsp;Naoki Suyama,&nbsp;Ryousuke Ishikawa,&nbsp;Makoto Konagai","doi":"10.1002/solr.202500317","DOIUrl":"https://doi.org/10.1002/solr.202500317","url":null,"abstract":"<p>Perovskite solar cells (PSCs) have gained considerable attention owing to their high efficiency and potential for large-scale applications, particularly for flexible substrates that are implemented in industrial roofing and building-integrated photovoltaics. In this article, flexible PSCs with a through-hole current-collection structure using polyimide (PI) films are proposed. Perovskite cells with a conversion efficiency of 12.3% and a short-circuit current density of nearly 18 mA/cm² are successfully fabricated through the precise punching of the PI films and optimization of the dehumidification treatment. However, the film thickness at the hole edges affects the performance, particularly the fill factor, which is a major challenge. The laser scribing processes are also addressed, which cause degradation and issues with moisture penetration, and solutions for improving the film coverage and reducing leakage currents are proposed. The findings indicate that through-hole structures can enhance the roll-to-roll production of flexible PSCs, presenting considerable potential for large-scale applications in photovoltaic systems.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 15","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing Quantum Dots Integration for Enhanced Charge Dynamics In Carbon Perovskite Solar Cells","authors":"Fatou Diaw Ndiaye,&nbsp;Gilles De Moor,&nbsp;Lara Perrin,&nbsp;Stéphanie Narbey,&nbsp;Maria Bernechea,&nbsp;Lionel Flandin,&nbsp;Emilie Planes","doi":"10.1002/solr.202500295","DOIUrl":"https://doi.org/10.1002/solr.202500295","url":null,"abstract":"<p>Metal halide perovskites have reshaped the photovoltaic (PV) research, but their commercialization is hindered by limited stability and a spectral response confined to the visible range. This study explores the integration of CsPbBr₃ quantum dots (QDs) with MAPbI₃-base perovskites as a strategy to convert ultraviolet light into visible light, thus enhancing both power conversion efficiency (PCE) and operational stability. Two types of QDs—one synthesized at room temperature with short-chain ligands, the other commercially produced via hot injection with long-chain ligands—are compared to assess the influence of synthesis route and surface chemistry on device performance. Heterojunction solar cells are fabricated by drop-casting in ambient conditions, using a combination of QDs, MAPbI₃ and the AVAI additive. Various integration methods (blending into the perovskite matrix, sequential deposition, and surface application) are investigated. Devices incorporating QDs show a PCE improvement of up to 11.8%, reaching 10.4% compared to 9.3% for the reference. Thanks to advanced characterization techniques, these results offer valuable insights into how the properties of quantum dots influence charge generation mechanisms, paving the way for more robust and scalable carbon-based perovskite solar cell technologies.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 14","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144687969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoluminescence Quantum Yield in Perovskite Solar Cells: Probing Interface Recombination and Efficiency Limits","authors":"Jiaqi Liu,&nbsp;Huān Bì,&nbsp;Liang Wang,&nbsp;Qing Shen,&nbsp;Shuzi Hayase","doi":"10.1002/solr.202500409","DOIUrl":"https://doi.org/10.1002/solr.202500409","url":null,"abstract":"<p>This review surveys recent advances in employing photoluminescence quantum yield (PLQY) as a quantitative probe in perovskite solar cells (PSCs), highlighting its unique ability to diagnose interfacial nonradiative recombination, reconstruct quasi-Fermi-level splitting (QFLS), and anticipate efficiency limits. After presenting the theoretical framework that converts PLQY into QFLS so that it can be directly benchmarked against the device open-circuit voltage (<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>V</mi>\u0000 <mrow>\u0000 <mrow>\u0000 <mi>OC</mi>\u0000 </mrow>\u0000 </mrow>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$V_{mathrm{OC}}$</annotation>\u0000 </semantics></math>), we clarify the complementarity between PLQY and conventional time-resolved photoluminescence. Representative case studies then illustrate how PLQY pinpoints recombination losses at the perovskite/electron-transport-layer and perovskite/hole-transport-layer interfaces and how targeted passivation strategies simultaneously enhance PLQY, QFLS, and overall device efficiency. The review also discusses how illumination intensity, excitation wavelength, temperature, and humidity influence PLQY measurements and argues that coupling high-throughput, in situ PLQY mapping with machine-learning algorithms promises to accelerate the discovery of highly efficient, lead-free, and stable perovskite materials and devices.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 15","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144768031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A New Strategy for Omnidirectional Broadband Absorption of the Solar Radiation for Thin-Film Solar Cells","authors":"Nipun Vashistha,&nbsp;Erez Golan,&nbsp;Nadav Aharon,&nbsp;Gil Shalev","doi":"10.1002/solr.202500240","DOIUrl":"https://doi.org/10.1002/solr.202500240","url":null,"abstract":"<p>Thin films (TFs) are promising candidates for efficient low-cost solar cells (SCs). However, the reduced thickness poses a challenge for efficient optical absorption. This work demonstrates omnidirectional broadband absorption of polysilicon (p-Si) TFs decorated with light cone (LC) arrays composed of inverted cones decorated with sidewall subwavelength structures and top dielectric nanolenses. The study compares the optical absorption of p-Si samples: TF, TF with anti-reflection coating, TF decorated with optimized array of nanopillars (NP) each with SiO₂ nanolens, and TF decorated with a LC array. The height of the p-Si is 1.2 µm on top of a glass substrate. Specular, diffused and specular-diffused farfield spectroscopy are employed. The specular-diffused spectroscopy indicates that the broadband transmission and reflection of the LC array is 19.3% and 56.3%, respectively, lower than that of the NP array. Three-dimensional numerical calculations suggest that LC array provides an efficient mechanism for refracting the incoming photons into the array lateral directions combined with enhanced coupling of the incoming photons to the p-Si dielectrics. The performance of SCs based on LC arrays is numerically evaluated with a significant efficiency enhancement. The LC array paradigm paves the way for low-cost and efficient TF SCs.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 15","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500240","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144768082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hole Transport Role of Perovskite in Thick Film Perovskite Solar Cells without a Rear Blocking Layer","authors":"Seungmin Lee,&nbsp;Soyun Kim,&nbsp;Tae Won Lee,&nbsp;Oui Jin Oh,&nbsp;Dong Hyun Kim,&nbsp;Dong Hun Kang,&nbsp;Jun Hong Noh","doi":"10.1002/solr.202500332","DOIUrl":"https://doi.org/10.1002/solr.202500332","url":null,"abstract":"<p>Perovskite solar cells (PSCs) have achieved remarkable efficiencies, largely due to the use of nanoscale light-absorbing layers. This success has led to significant research into scalable fabrication processes for these thin films. Although microscale deposition techniques offer established benefits for large-area manufacturing, PSCs with thicker perovskite layers (exceeding 1 μm) typically exhibit lower efficiencies. This study aims to elucidate the fundamental factors limiting the efficiency of microscale perovskite light absorbers in solar cell devices, with the goal of leveraging the scalability of microscale deposition for high-performance PSCs. We also focused on the excellent hole-transporting properties of perovskites and evaluated their performance potential in the absence of a rear blocking layer (RBL). Thick perovskite films with thicknesses up to 7 μm were fabricated, and the performance of these RBL-free PSCs was assessed. Our results demonstrate that an RBL-free PSC with a thickness of 3 μm can achieve an efficiency approaching 13.83%. Notably, in these RBL-free PSCs, unlike conventional perovskite architectures, the thickness of the perovskite layer directly influences the recombination pathway, consequently leading to an increase in the open-circuit voltage. These findings highlight the importance of RBL-free thick-film PSCs and suggest their significant potential for the development of high-performance devices.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 15","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500332","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144768081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}